• Photonics Research
  • Vol. 9, Issue 7, 1255 (2021)
Yiding Lin1、2、5, Danhao Ma3, Kwang Hong Lee2, Rui-Tao Wen4、6, Govindo Syaranamual2, Lionel C. Kimerling3, Chuan Seng Tan1、2、*, and Jurgen Michel2、3、4、7
Author Affiliations
  • 1School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 2Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore
  • 3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 4Materials Research Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 5Current address: Max Planck Institute of Microstructure Physics, Halle (Saale) 06120, Germany
  • 6Current address: Southern University of Science and Technology, Shenzhen 518055, China
  • 7e-mail: jmichel@mit.edu
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    DOI: 10.1364/PRJ.419776 Cite this Article Set citation alerts
    Yiding Lin, Danhao Ma, Kwang Hong Lee, Rui-Tao Wen, Govindo Syaranamual, Lionel C. Kimerling, Chuan Seng Tan, Jurgen Michel. PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor[J]. Photonics Research, 2021, 9(7): 1255 Copy Citation Text show less
    References

    [1] M. J. Süess, R. Geiger, R. A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, G. Isella, R. Spolenak, J. Faist, H. Sigg. Analysis of enhanced light emission from highly strained germanium microbridges. Nat. Photonics, 7, 466-472(2013).

    [2] R. Rafael, C.-G. Andrés, C. Emmanuele, G. Francisco. Strain engineering in semiconducting two-dimensional crystals. J. Phys. Condens. Matter, 27, 313201(2015).

    [3] A. R. Adams. Band-structure engineering for low-threshold high-efficiency semiconductor lasers. Electron. Lett., 22, 249-250(1986).

    [4] M. L. Lee, E. A. Fitzgerald, M. T. Bulsara, M. T. Currie, A. Lochtefeld. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys., 97, 011101(2004).

    [5] R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Fage-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsigri, A. Bjarklev. Strained silicon as a new electro-optic material. Nature, 441, 199-202(2006).

    [6] M. Cazzanelli, F. Bianco, E. Borga, G. Pucker, M. Ghulinyan, E. Degoli, E. Luppi, V. Véniard, S. Ossicini, D. Modotto, S. Wabnitz, R. Pierobon, L. Pavesi. Second-harmonic generation in silicon waveguides strained by silicon nitride. Nat. Mater., 11, 148-154(2011).

    [7] A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J.-M. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, M. El Kurdi. Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys. Nat. Photonics, 14, 375-382(2020).

    [8] M. El Kurdi, M. Prost, A. Ghrib, S. Sauvage, X. Checoury, G. Beaudoin, I. Sagnes, G. Picardi, R. Ossikovski, P. Boucaud. Direct band gap germanium microdisks obtained with silicon nitride stressor layers. ACS Photon., 3, 443-448(2016).

    [9] F. T. Armand Pilon, A. Lyasota, Y. M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg. Lasing in strained germanium microbridges. Nat. Commun., 10, 2724(2019).

    [10] A. Gassenq, K. Guilloy, G. Osvaldo Dias, N. Pauc, D. Rouchon, J. M. Hartmann, J. Widiez, S. Tardif, F. Rieutord, J. Escalante, I. Duchemin, Y. M. Niquet, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, V. Calvo. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications. Appl. Phys. Lett., 107, 191904(2015).

    [11] J.-H. Seo, E. Swinnich, Y.-Y. Zhang, M. Kim. Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications. Mater. Res. Lett., 8, 123-144(2020).

    [12] S. An, S. Wu, C. S. Tan, G.-E. Chang, X. Gong, M. Kim. Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending. J. Mater. Chem. C, 8, 13557-13562(2020).

    [13] J. Jiang, M. Xue, C.-Y. Lu, C. S. Fenrich, M. Morea, K. Zang, J. Gao, M. Cheng, Y. Zhang, T. I. Kamins, J. S. Harris, J. Sun. Strain-induced enhancement of electroluminescence from highly strained germanium light-emitting diodes. ACS Photon., 6, 915-923(2019).

    [14] D. Nam, D. Sukhdeo, A. Roy, K. Balram, S.-L. Cheng, K. C.-Y. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. Miller, K. Saraswat. Strained germanium thin film membrane on silicon substrate for optoelectronics. Opt. Express, 19, 25866-25872(2011).

    [15] D. Nam, D. Sukhdeo, S.-L. Cheng, A. Roy, K. C.-Y. Huang, M. Brongersma, Y. Nishi, K. Saraswat. Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser. Appl. Phys. Lett., 100, 131112(2012).

    [16] G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, T. Schroeder. Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process. Opt. Express, 22, 399-410(2014).

    [17] A. Ghrib, M. de Kersauson, M. El Kurdi, R. Jakomin, G. Beaudoin, S. Sauvage, G. Fishman, G. Ndong, M. Chaigneau, R. Ossikovski, I. Sagnes, P. Boucaud. Control of tensile strain in germanium waveguides through silicon nitride layers. Appl. Phys. Lett., 100, 201104(2012).

    [18] M. de Kersauson, M. Prost, A. Ghrib, M. El Kurdi, S. Sauvage, G. Beaudoin, L. Largeau, O. Mauguin, R. Jakomin, I. Sagnes, G. Ndong, M. Chaigneau, R. Ossikovski, P. Boucaud. Effect of increasing thickness on tensile-strained germanium grown on InGaAs buffer layers. J. Appl. Phys., 113, 183508(2013).

    [19] Y. Bai, K. E. Lee, C. Cheng, M. L. Lee, E. A. Fitzgerald. Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition. J. Appl. Phys., 104, 084518(2008).

    [20] Y. Lin, D. Ma, K. H. Lee, J. Michel, C. S. Tan. A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications. Proc. SPIE, 10537, 1053704(2018).

    [21] O. I. Dosunmu, D. D. Cannon, M. K. Emsley, B. Ghyselen, J. Liu, L. C. Kimerling, M. S. Unlu. Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates. IEEE J. Sel. Top. Quantum Electron., 10, 694-701(2004).

    [22] K. H. Lee, S. Bao, G. Y. Chong, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer. J. Appl. Phys., 116, 103506(2014).

    [23] Y. Lin, K. H. Lee, S. Bao, X. Guo, H. Wang, J. Michel, C. S. Tan. High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform. Photon. Res., 5, 702-709(2017).

    [24] Y. Lin, D. Ma, K. H. Lee, S. Bao, J. Michel, C. S. Tan. Extension of Germanium-on-insulator optical absorption edge using CMOS-compatible silicon nitride stressor. Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 1-5(2017).

    [25] S. Sze. Semiconductor Devices: Physics and Technology, 311-313(2002).

    [26] B. S. Pearson, L. C. Kimerling, J. Michel. Germanium photodetectors on amorphous substrates for electronic-photonic integration. IEEE 13th International Conference on Group IV Photonics (GFP), 20-21(2016).

    [27] G. Dushaq, A. Nayfeh, M. Rasras. Metal-germanium-metal photodetector grown on silicon using low temperature RF-PECVD. Opt. Express, 25, 32110-32119(2017).

    [28] K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, D.-L. Kwong. High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si:C) Schottky barrier enhancement layer. IEEE Photon. Technol. Lett., 20, 754-756(2008).

    [29] J. H. Nam. Monolithic integration of germanium-on-insulator platform on silicon substrate and its applications to devices(2016).

    [30] Y. Lin, B. Son, K. H. Lee, J. Michel, C. S. Tan. Sub-mA/cm2 dark current density, buffer-less germanium (Ge) photodiodes on a 200-mm Ge-on-insulator substrate. IEEE Trans. Electron Devices, 68, 1730-1737(2021).

    [31] W. S. Yoo, T. Ueda, T. Ishigaki, H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto, C. S. Tan. Detection of Ge and Si intermixing in Ge/Si using multiwavelength micro-Raman spectroscopy. ECS Trans., 64, 79-88(2014).

    [32] C. G. Van de Walle. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B, 39, 1871-1883(1989).

    [33] J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, J. Michel. Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si. Opt. Express, 15, 11272-11277(2007).

    [34] A. Frova, P. Handler. Franz-Keldysh effect in the space-charge region of a germanium p−n junction. Phys. Rev., 137, A1857-A1861(1965).

    [35] K. Ye, W. Zhang, M. Oehme, M. Schmid, M. Gollhofer, K. Kostecki, D. Widmann, R. Körner, E. Kasper, J. Schulze. Absorption coefficients of GeSn extracted from PIN photodetector response. Solid-State Electron., 110, 71-75(2015).

    [36] X. Li, Z. Li, S. Li, L. Chrostowski, G. Xia. Design considerations of biaxially tensile-strained germanium-on-silicon lasers. Semicond. Sci. Technol., 31, 065015(2016).

    [37] D. Ma. Ge and GeSi electroabsorption modulator arrays via strain and composition engineering(2020).

    [38] D. Feng, W. Qian, H. Liang, C.-C. Kung, Z. Zhou, Z. Li, J. S. Levy, R. Shafiiha, J. Fong, B. Jonathan Luff, M. Asghari. High-speed GeSi electroabsorption modulator on the SOI waveguide platform. IEEE J. Sel. Top. Quantum Electron., 19, 64-73(2013).

    [39] N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, M. Asghari. 30 GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide. Opt. Express, 19, 7062-7067(2011).

    [40] S. A. Srinivasan, M. Pantouvaki, S. Gupta, H. T. Chen, P. Verheyen, G. Lepage, G. Roelkens, K. Saraswat, D. V. Thourhout, P. Absil, J. V. Campenhout. 56 Gb/s germanium waveguide electro-absorption modulator. J. Lightwave Technol., 34, 419-424(2016).

    [41] S. L. Chuang. Physics of Photonic Devices, 80(2012).

    [42] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, L. C. Kimerling. Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100). Phys. Rev. B, 70, 155309(2004).

    Yiding Lin, Danhao Ma, Kwang Hong Lee, Rui-Tao Wen, Govindo Syaranamual, Lionel C. Kimerling, Chuan Seng Tan, Jurgen Michel. PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiNx stressor[J]. Photonics Research, 2021, 9(7): 1255
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