[1] J Wang. A novel spin-FET based on 2D antiferromagnet. J Semicond, 40, 020401(2019).
[2] W Jiang, X Wang, Y Chen et al. Large-area high quality PtSe2 thin film with versatile polarity. InfoMat, 1, 260(2019).
[3] G Wu, X Wang, Y Chen et al. Ultrahigh photoresponsivity MoS2 photodetector with tunable photocurrent generation mechanism. Nanotechnology, 29, 485204(2018).
[4] L Liu, X Wang, L Han et al. Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate. AIP Adv, 7, 065121(2017).
[5] S Xue, X L Zhao, J L Wang et al. Preparation of La0.67Ca0.23- Sr0.1MnO3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition. Sci Chin Phys, Mechan, Astron, 60, 027521(2017).
[6] J Wang, H Fang, X Wang et al. Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet-visible to infrared. Small, 13, 1700894(2017).
[7] Y W Son, M L Cohen, S G Louie. Energy gaps in graphene nanoribbons. Phys Rev Lett, 97, 216803(2006).
[8] J C Meyer, A K Geim, M I Katsnelson et al. The structure of suspended graphene sheets. Nature, 446, 60(2007).
[9] H Peelaers, C G Van de Walle. Effects of strain on band structure and effective masses in MoS2. Phys Rev B, 86, 241401(2012).
[10] D H Kang, M S Kim, J Shim et al. High-performance transition metal dichalcogenide photodetectors enhanced by self-assembled monolayer doping. Adv Funct Mater, 25, 4219(2015).
[11] L Wang, J Jie, Z Shao et al. MoS2/Si heterojunction with vertically standing layered structure for ultrafast, high-detectivity, self-driven visible-near infrared photodetectors. Adv Funct Maters, 25, 2910(2015).
[12] D Jariwala, V K Sangwan, C C Wu et al. Gate-tunable carbon nanotube-MoS2 heterojunction pn diode. Proc Nat Acad Sci, 110, 18076(2013).
[13] K S Novoselov, A K Geim, S V Morozov et al. Electric field effect in atomically thin carbon films. Science, 306, 666(2004).
[14] R Addou, L Colombo, R M Wallace. Surface defects on natural MoS2. ACS Appl Mater Interfaces, 7, 11921(2015).
[15] A Di Bartolomeo, L Genovese, F Giubileo et al. Hysteresis in the transfer characteristics of MoS2 transistors. 2D Mater, 5, 015014(2017).
[16] J Kwon, Y K Hong, G Han et al. Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures. Adv Mater, 27, 2224(2015).
[17] W Zhang, J K Huang, C H Chen et al. High-gain phototransistors based on a CVD MoS2 monolayer. Adv Mater, 25, 3456(2013).
[18] C L Wu, J W. Chen C H Chen et al. A gate-free monolayer WSe2 pn diode. APS Meeting Abstracts(2018).
[19] C Baeumer, D Saldana-Greco, J M P Martirez et al. Ferroelectrically driven spatial carrier density modulation in graphene. Nat Commun, 6, 6136(2015).
[20] C Yin, X Wang, Y Chen et al. A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor. Nanoscale, 10, 1727(2018).
[21] B B Tian, J L Wang, S Fusil et al. Tunnel electroresistance through organic ferroelectrics. Nat Commun, 7, 11502(2016).
[22] X Wang, P Wang, J Wang et al. Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics. Adv Mater, 27, 6575(2015).
[23] D Kufer, G Konstantatos. Highly sensitive, encapsulated MoS2 photodetector with gate controllable gain and speed. Nano Lett, 15, 7307(2015).
[24] H S Lee, S W Min, M K Park et al. MoS2 nanosheets for top-gate nonvolatile memory transistor channel. Small, 8, 3111(2012).
[25] E Zhang, W Wang, C Zhang et al. Tunable charge-trap memory based on few-layer MoS2. ACS Nano, 9, 612(2014).
[26] D Zhao, I Katsouras, K Asadi et al. Switching dynamics in ferroelectric P (VDF-TrFE) thin films. Phys Rev B, 92, 214115(2015).
[27] M M Furchi, D K Polyushkin, A Pospischil et al. Mechanisms of photoconductivity in atomically thin MoS2. Nano Lett, 14, 6165(2014).
[28] H S Lee, S W Min, Y G Chang et al. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett, 12, 3695(2012).
[29] H Li, J Wu, Z Yin et al. Preparation and applications of mechanically exfoliated single-layer and multilayer MoS2 and WSe2 nanosheets. Acc Chem Res, 47, 1067(2014).
[30] A Gruverman, S V Kalinin. Piezoresponse force microscopy and recent advances in nanoscale studies of ferroelectrics. J Mater Sci, 41, 107(2006).
[31] X Chen, Z Wu, S Xu et al. Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures. Nat Commun, 6, 6088(2015).
[32] E J G Santos, E Kaxiras. Electrically driven tuning of the dielectric constant in MoS2 layers. ACS Nano, 7, 10741(2013).
[33] Y Xie, B Zhang, S Wang et al. Ultrabroadband MoS2 photodetector with spectral response from 445 to 2717 nm. Adv Mater, 29, 1605972(2017).
[34] O Lopez-Sanchez, D Lembke, M Kayci et al. Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol, 8, 497(2013).
[35] K M McCreary, A T Hanbicki, J T Robinson et al. Large-area synthesis of continuous and uniform MoS2 monolayer films on graphene. Adv Funct Mater, 24, 6449(2014).
[36] M Long, P Wang, H Fang et al. Progress, challenges, and opportunities for 2D material based photodetectors. Adv Funct Mater, 29, 1803807(2019).
[37] L Yin, Z Wang, F Wang et al. Ferroelectric-induced carrier modulation for ambipolar transition metal dichalcogenide transistors. Appl Phys Lett, 110(2017).
[38] W Choi, M Y Cho, A Konar et al. High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared. Adv Mater, 24, 5832(2012).