• Journal of Semiconductors
  • Vol. 40, Issue 8, 081506 (2019)
Yilun Gu1, Shengli Guo1, and Fanlong Ning1、2
Author Affiliations
  • 1Zhejiang Province Key Laboratory of Quantum Technology and Device and Department of Physics, Zhejiang University, Hangzhou 310027, China
  • 2Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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    DOI: 10.1088/1674-4926/40/8/081506 Cite this Article
    Yilun Gu, Shengli Guo, Fanlong Ning. Progress on microscopic properties of diluted magnetic semiconductors by NMR and μSR[J]. Journal of Semiconductors, 2019, 40(8): 081506 Copy Citation Text show less
    (Color online) The probability to find Li(0), Li(1), Li(2), Li(3), Li(4) for 10% Mn doped into Cd sites in LiCdP. The number in bracket means the number of Mn atoms at N.N. Cd sites.
    Fig. 1. (Color online) The probability to find Li(0), Li(1), Li(2), Li(3), Li(4) for 10% Mn doped into Cd sites in LiCdP. The number in bracket means the number of Mn atoms at N.N. Cd sites.
    (Color online) The representative 7Li line shapes of (a) Li1.1CdP and (b) Li1.1(Cd,Mn)P.
    Fig. 2. (Color online) The representative 7Li line shapes of (a) Li1.1CdP and (b) Li1.1(Cd,Mn)P.
    (Color online) (a) The temperature dependence of the 7Li NMR Knight shifts, – 7K, at the Li(Mn)sites. The HHFW of Li(0) in Li(ZnMn)P. Inset: The DC magnetization M measured at Bext = 100 Oe. (b) 1/T1 of Li(0) and Li(Mn) of Li(ZnMn)P. The dashed line marks = 25 K. Adopted from Ref. [28].
    Fig. 3. (Color online) (a) The temperature dependence of the 7Li NMR Knight shifts, – 7K, at the Li(Mn)sites. The HHFW of Li(0) in Li(Zn Mn )P. Inset: The DC magnetization M measured at Bext = 100 Oe. (b) 1/T1 of Li(0) and Li(Mn) of Li(Zn Mn )P. The dashed line marks = 25 K. Adopted from Ref. [28].
    (Color online) (a) The zero field μSR time spectra of Li(ZnMn)As. (b) The relaxation rate of the signal that exhibits fast relaxation. (c) The volume fraction of the magnetically ordered region, derived from the amplitude of the fast relaxing signal. (d) Comparison between Li(ZnMn)As and (Ga,Mn)As in a plot of the relaxation rate versus . Adopted from Ref. [17].
    Fig. 4. (Color online) (a) The zero field μSR time spectra of Li (Zn Mn )As. (b) The relaxation rate of the signal that exhibits fast relaxation. (c) The volume fraction of the magnetically ordered region, derived from the amplitude of the fast relaxing signal. (d) Comparison between Li (Zn Mn )As and (Ga,Mn)As in a plot of the relaxation rate versus . Adopted from Ref. [17].
    (Color online) (a) The time spectra of LF-μSR in (LaBa)(ZnMn)AsO with a longitudinal field of 200 G. (b) Muon spin relaxation rate 1/due to dynamic spin fluctuation. Adopted from Ref. [18].
    Fig. 5. (Color online) (a) The time spectra of LF-μSR in (La Ba )(Zn Mn )AsO with a longitudinal field of 200 G. (b) Muon spin relaxation rate 1/ due to dynamic spin fluctuation. Adopted from Ref. [18].
    (Color online) Correlation between the static internal field parameter determined at 2 K by ZF-μSR versus Curie temperature observed in (Ga,Mn)As, Li(Zn,Mn)As, Li(Zn,Mn)P, (La,Ba)(Zn,Mn)AsO and (Ba,K)(Zn,Mn)As. Adopted from Ref. [29].
    Fig. 6. (Color online) Correlation between the static internal field parameter determined at 2 K by ZF-μSR versus Curie temperature observed in (Ga,Mn)As, Li(Zn,Mn)As, Li(Zn,Mn)P, (La,Ba)(Zn,Mn)AsO and (Ba,K)(Zn,Mn) As . Adopted from Ref. [29].
    (Color online) (a) ZF-μSR time spectra obtained in polycrystalline specimen of (BaK)(ZnMn)As. (b) Volume fraction of regions with static magnetic order, estimated by μSR measurements in ZF and WTF of 50 G. Inset: DC magnetization results of the specimens used in μSR measurements. Adopted from Ref. [19].
    Fig. 7. (Color online) (a) ZF-μSR time spectra obtained in polycrystalline specimen of (Ba K )(Zn Mn ) As . (b) Volume fraction of regions with static magnetic order, estimated by μSR measurements in ZF and WTF of 50 G. Inset: DC magnetization results of the specimens used in μSR measurements. Adopted from Ref. [19].
    Yilun Gu, Shengli Guo, Fanlong Ning. Progress on microscopic properties of diluted magnetic semiconductors by NMR and μSR[J]. Journal of Semiconductors, 2019, 40(8): 081506
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