• Journal of Semiconductors
  • Vol. 40, Issue 8, 081506 (2019)
Yilun Gu1, Shengli Guo1, and Fanlong Ning1、2
Author Affiliations
  • 1Zhejiang Province Key Laboratory of Quantum Technology and Device and Department of Physics, Zhejiang University, Hangzhou 310027, China
  • 2Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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    DOI: 10.1088/1674-4926/40/8/081506 Cite this Article
    Yilun Gu, Shengli Guo, Fanlong Ning. Progress on microscopic properties of diluted magnetic semiconductors by NMR and μSR[J]. Journal of Semiconductors, 2019, 40(8): 081506 Copy Citation Text show less

    Abstract

    Diluted magnetic semiconductors (DMSs) that possess both properties of semiconductors and ferromagnetism, have attracted a lot of attentions due to its potential applications for spin-sensitive electronic devices. Recently, a series of bulk form DMSs isostructural to iron-based superconductors have been reported, which can be readily investigated by microscopic experimental techniques such as nuclear magnetic resonance (NMR) and muon spin rotation (μSR). The measurements have demonstrated that homogeneous ferromagnetism is achieved in these DMSs. In this review article, we summarize experimental evidences from both NMR and μSR measurements. NMR results have shown that carriers facilitate the interactions between distant Mn atoms, while μSR results indicate that these bulk form DMSs and (Ga,Mn)As share a common mechanism for the ferromagnetic exchange interactions.
    $ \begin{array}{l} \displaystyle\frac{1}{T_1} \propto T\displaystyle\sum_q|A({q})|^2\displaystyle\frac{\chi''({{q}},{ f_0)}}{ f_0} \end{array}, $(1)

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    $ \begin{array}{l} \displaystyle\frac{1}{T_1} = \sqrt{2\pi}\displaystyle\frac{S(S+1)}{3\omega_{\rm e}}\left(\frac{A_0}{\hbar}\right)^2 \end{array} ,$(2)

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    $ \begin{array}{l} \omega^2_{\rm e} = \displaystyle\frac{2}{3}zS(S+1)\left(\displaystyle\frac{J}{\hbar}\right)^2 \end{array} ,$(3)

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    $ \begin{array}{l} A(t) = A_{\rm mag}G_Z^L(t) + A_{\rm para}{\rm exp}\left[-({\lambda}t)^{\beta}\right] \end{array}. $(4)

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    $ \begin{array}{l} f(H_i) = \displaystyle\frac{{\gamma}_{\mu}}{\pi}\displaystyle\frac{a}{a^2+{\gamma}^{2}_{\mu}H^2_i} \end{array} ,$(5)

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    $ \begin{array}{l} G^L_Z(T) = \displaystyle\frac{1}{3}+\displaystyle\frac{2}{3}(1-at){\rm exp}(-at) \end{array} ,$(6)

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    $ \begin{array}{l} G^L_Z(T) = 1-\displaystyle\frac{4}{3}at+a^2t^2+\cdots .\end{array} $(7)

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    $ \begin{array}{l} G^L_Z(T) = 1-{\varLambda}t+\displaystyle\frac{1}{2}{\varLambda}^2t^2+\cdots ,\end{array} $(8)

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    Yilun Gu, Shengli Guo, Fanlong Ning. Progress on microscopic properties of diluted magnetic semiconductors by NMR and μSR[J]. Journal of Semiconductors, 2019, 40(8): 081506
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