• Journal of Semiconductors
  • Vol. 43, Issue 4, 041104 (2022)
Zhen Fang1、2, Yao Liu3, Chengyi Song1、2, Peng Tao1、2, Wen Shang1、2, Tao Deng1、2, Xiaoqin Zeng3, and Jianbo Wu1、2、4、5
Author Affiliations
  • 1State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
  • 2Center of Hydrogen Science, Shanghai Jiao Tong University, Shanghai 200240, China
  • 3National Engineering Research Center of Light Alloy Net Forming, Shanghai Jiao Tong University, Shanghai 200240, China
  • 4Materials Genome Initiative Center, Shanghai Jiao Tong University, Shanghai 200240, China
  • 5Future Material Innovation Center, Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 200240, China
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    DOI: 10.1088/1674-4926/43/4/041104 Cite this Article
    Zhen Fang, Yao Liu, Chengyi Song, Peng Tao, Wen Shang, Tao Deng, Xiaoqin Zeng, Jianbo Wu. In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes[J]. Journal of Semiconductors, 2022, 43(4): 041104 Copy Citation Text show less
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    Zhen Fang, Yao Liu, Chengyi Song, Peng Tao, Wen Shang, Tao Deng, Xiaoqin Zeng, Jianbo Wu. In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes[J]. Journal of Semiconductors, 2022, 43(4): 041104
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