• Opto-Electronic Advances
  • Vol. 3, Issue 12, 200023-1 (2020)
Mingyu Tong1, Yuze Hu1, Xiangnan Xie3, Xiegang Zhu5, Zhenyu Wang2、4、*, Xiang'ai Cheng1, and Tian Jiang1
Author Affiliations
  • 1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
  • 2National Innovation Institute of Defense Technology, Academy of Military Sciences PLA China, Beijing 100010, China
  • 3State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
  • 4Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 5Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, China
  • show less
    DOI: 10.29026/oea.2020.200023 Cite this Article
    Mingyu Tong, Yuze Hu, Xiangnan Xie, Xiegang Zhu, Zhenyu Wang, Xiang'ai Cheng, Tian Jiang. Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2[J]. Opto-Electronic Advances, 2020, 3(12): 200023-1 Copy Citation Text show less
    References

    [1] P Lodahl, S Mahmoodian, S Stobbe, A Rauschenbeutel, P Schneeweiss et al. Chiral quantum optics. Nature, 541, 473-480(2017).

    [2] T Kampfrath, A Sell, G Klatt, A Pashkin, S Mährlein et al. Coherent terahertz control of antiferromagnetic spin waves. Nat Photonics, 5, 31-34(2011).

    [3] S A Wolf, D D Awschalom, R A Buhrman, J M Daughton, S von Molnár et al. Spintronics: a spin-based electronics vision for the future. Science, 294, 1488-1495(2001).

    [4] B Ferguson, X C Zhang. Materials for terahertz science and technology. Nat Mater, 1, 26-33(2002).

    [5] J W McIver, D Hsieh, H Steinberg, P Jarillo-Herrero, N Gedik. Control over topological insulator photocurrents with light polarization. Nat Nanotechnol, 7, 96-100(2012).

    [6] L Braun, G Mussler, A Hruban, M Konczykowski, T Schumann et al. Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi2Se3. Nat Commun, 7, 13259(2016).

    [7] Y Gao, S Kaushik, E J Philip, Z Li, Y Qin et al. Chiral terahertz wave emission from the Weyl semimetal TaAs. Nat Commun, 11, 720(2020).

    [8] Z L Zhang, Y P Chen, S Cui, F He, M Chen et al. Manipulation of polarizations for broadband terahertz waves emitted from laser plasma filaments. Nat Photonics, 12, 554-559(2018).

    [9] A A Burkov, M D Hook, L Balents. Topological nodal semimetals. Phys Rev B, 84, 235126(2011).

    [10] C Fang, Y G Chen, H Y Kee, L Fu. Topological nodal line semimetals with and without spin-orbital coupling. Phys Rev B, 92, 081201(2015).

    [11] G Bian, T R Chang, R Sankar, S Y Xu, H Zheng et al. Topological nodal-line fermions in spin-orbit metal PbTaSe2. Nat Commun, 7, 10556(2016).

    [12] G Bian, T R Chang, H Zheng, S Velury, S Y Xu et al. Drumhead surface states and topological nodal-line fermions in TlTaSe2. Phys Rev B, 93, 121113(2016).

    [13] S Y Yang, H Yang, E Derunova, S S P Parkin, B H Yan et al. Symmetry demanded topological nodal-line materials. Adv Phys: X, 3, 1414631(2018).

    [14] R Yu, H M Weng, Z Fang, X Dai, X Hu. Topological node-line semimetal and dirac semimetal state in antiperovskite Cu3PdN. Phys Rev Lett, 115, 036807(2015).

    [15] Y Wu, L L Wang, E Mun, D D Johnson, D X Mou et al. Dirac node arcs in PtSn4. Nat Phys, 12, 667-671(2016).

    [16] T R Chang, I Pletikosic, T Kong, G Bian, A Huang et al. Realization of a type-Ⅱ nodal-line semimetal in Mg3Bi2. Adv Sci, 6, 1800897(2019).

    [17] J Mao, H T Zhu, Z W Ding, Z H Liu, G A Gamage et al. High thermoelectric cooling performance of n-type Mg3Bi2-based materials. Science, 365, 495-498(2019).

    [18] T Zhou, X G Zhu, M Y Tong, Y Zhang, X B Luo et al. Experimental evidence of topological surface states in Mg3Bi2 films grown by molecular beam epitaxy. Chin Phys Lett, 36, 117303(2019).

    [19] C M Tu, Y C Chen, P Huang, P Y Chuang, M Y Lin et al. Helicity-dependent terahertz emission spectroscopy of topological insulator Sb2Te3 thin films. Phys Rev B, 96, 195407(2017).

    [20] X M Zhang, L Jin, X F Dai, G D Liu. Topological Type-Ⅱ nodal line semimetal and dirac semimetal state in stable kagome compound Mg3Bi2. J Phys Chem Lett, 8, 4814-4819(2017).

    [21] J Sánchez-Barriga, E Golias, A Varykhalov, J Braun, L V Yashina et al. Ultrafast spin-polarization control of Dirac fermions in topological insulators. Phys Rev B, 93, 155426(2016).

    [22] J Maysonnave, S Huppert, F Wang, S Maero, C Berger et al. Terahertz generation by dynamical photon drag effect in graphene excited by femtosecond optical pulses. Nano Lett, 14, 5797-5802(2014).

    [23] H Plank, L E Golub, S Bauer, V V Bel'kov, T Herrmann et al. Photon drag effect in (Bi1-xSbx)2Te3 three-dimensional topological insulators. Phys Rev B, 93, 125434(2016).

    [24] L G Zhu, B Kubera, K Fai Mak, J Shan. Effect of surface states on terahertz emission from the Bi2Se3 surface. Sci Rep, 5, 10308(2015).

    [25] K X Zhang, Y Z Zhang, X C Wang, T M Yan, Y H Jiang. Continuum electron giving birth to terahertz emission. Photonics Res, 8, 760-767(2020).

    [26] D A Bas, R A Muniz, S Babakiray, D Lederman, J E Sipe et al. Photocurrents in Bi2Se3: bulk versus surface, and injection versus shift currents. Opt Express, 24, 23583(2016).

    [27] B C Park, T H Kim, K I Sim, B Y Kang, J W Kim et al. Terahertz single conductance quantum and topological phase transitions in topological insulator Bi2Se3 ultrathin films. Nat Commun, 6, 6552(2015).

    [28] L He, F X Xiu, X X Yu, M Teague, W J Jiang et al. Surface-dominated conduction in a 6 nm thick Bi2Se3 thin film. Nano Lett, 12, 1486-1490(2012).

    [29] Y Pan, Q Z Wang, A L Yeats, T Pillsbury, T C Flanagan et al. Helicity dependent photocurrent in electrically gated (Bi1-xSbx)2Te3 thin films. Nat Commun, 8, 1037(2017).

    [30] S Y Hamh, S H Park, S K Jerng, J H Jeon, S H Chun et al. Helicity-dependent photocurrent in a Bi2Se3 thin film probed by terahertz emission spectroscopy. Phys Rev B, 94, 161405(2016).

    [31] T Kampfrath, M Battiato, P Maldonado, G Eilers, J Nötzold et al. Terahertz spin current pulses controlled by magnetic heterostructures. Nat Nanotechnol, 8, 256-260(2013).

    [32] Y Kinoshita, N Kida, T Miyamoto, M Kanou, T Sasagawa et al. Terahertz radiation by subpicosecond spin-polarized photocurrent originating from Dirac electrons in a Rashba-type polar semiconductor. Phys Rev B, 97, 161104(2018).

    [33] Y Wu, M Elyasi, X P Qiu, M J Chen, Y Liu et al. High-performance THz emitters based on ferromagnetic/nonmagnetic heterostructures. Adv Mater, 29, 1603031(2017).

    [34] Y M Bahk, G Ramakrishnan, J Choi, H Song, G Choi et al. Plasmon enhanced terahertz emission from single layer graphene. ACS Nano, 8, 9089-9096(2014).

    [35] N Sirica, R I Tobey, L X Zhao, G F Chen, B Xu et al. Tracking ultrafast photocurrents in the Weyl semimetal TaAs using THz emission spectroscopy. Phys Rev Lett, 122, 197401(2019).

    [36] M J Chen, Y Wu, Y Liu, K Lee, X P Qiu et al. Current-enhanced broadband THz emission from spintronic devices. Adv Opt Mater, 7, 1801608(2019).

    [37] J E Moore, J Orenstein. Confinement-induced berry phase and helicity-dependent photocurrents. Phys Rev Lett, 105, 026805(2010).

    [38] J P Dong, K P Gradwohl, Y D Xu, T Wang, B B Zhang et al. Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy. Photonics Res, 7, 518-525(2019).

    [39] G Miltos Maragkakis, S Psilodimitrakopoulos, L Mouchliadis, I Paradisanos, A Lemonis et al. Imaging the crystal orientation of 2D transition metal dichalcogenides using polarization-resolved second-harmonic generation. Opto-Electron Adv, 2, 190026(2019).

    [40] Y Z Hu, T Jiang, J H Zhou, H Hao, H Sun et al. Ultrafast terahertz frequency and phase tuning by all-optical molecularization of metasurfaces. Adv Optical Mater, 7, 1901050(2019).

    Mingyu Tong, Yuze Hu, Xiangnan Xie, Xiegang Zhu, Zhenyu Wang, Xiang'ai Cheng, Tian Jiang. Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2[J]. Opto-Electronic Advances, 2020, 3(12): 200023-1
    Download Citation