• Opto-Electronic Advances
  • Vol. 3, Issue 12, 200023-1 (2020)
Mingyu Tong1, Yuze Hu1, Xiangnan Xie3, Xiegang Zhu5, Zhenyu Wang2、4、*, Xiang'ai Cheng1, and Tian Jiang1
Author Affiliations
  • 1College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
  • 2National Innovation Institute of Defense Technology, Academy of Military Sciences PLA China, Beijing 100010, China
  • 3State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha 410073, China
  • 4Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 5Science and Technology on Surface Physics and Chemistry Laboratory, Jiangyou 621908, China
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    DOI: 10.29026/oea.2020.200023 Cite this Article
    Mingyu Tong, Yuze Hu, Xiangnan Xie, Xiegang Zhu, Zhenyu Wang, Xiang'ai Cheng, Tian Jiang. Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2[J]. Opto-Electronic Advances, 2020, 3(12): 200023-1 Copy Citation Text show less

    Abstract

    Helicity-dependent ultrafast spin current generated by circularly polarized photons in topological materials holds the crux to many technological improvements, such as quantum communications, on-chip communication processing and storage. Here, we present the manipulation of helicity-dependent terahertz emission generated in a nodal line semimetal candidate Mg3Bi2 by using photon polarization states. The terahertz emission is mainly ascribed to the helicity-dependent photocurrent that is originated from circular photogalvanic effects, and the helicity-independent photocurrent that is attributed to linear photogalvanic effect. Our work will inspire more explorations into novel nodal line semimetals and open up new opportunities for developing ultrafast optoelectronics in the topological system.
    $ {\mathit{\boldsymbol{E}}_{{\rm{THz}}}} \propto \frac{\partial }{{\partial t}}\mathit{\boldsymbol{J}}\mathit{\boldsymbol{.}} $ (1)

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    $ {E_{{\rm{THz(}}\alpha {\rm{)}}}} = C\sin (2\alpha ) + {L_1}\sin (4\alpha ) + {L_2}\cos (4\alpha ) + D. $ (2)

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    Mingyu Tong, Yuze Hu, Xiangnan Xie, Xiegang Zhu, Zhenyu Wang, Xiang'ai Cheng, Tian Jiang. Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2[J]. Opto-Electronic Advances, 2020, 3(12): 200023-1
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