Chao Zhao, Bo Xu, Zhijie Wang, Zhanguo Wang. Boron-doped III–V semiconductors for Si-based optoelectronic devices[J]. Journal of Semiconductors, 2020, 41(1): 011301
- Journal of Semiconductors
- Vol. 41, Issue 1, 011301 (2020)
![(Color online) The bandgap energy versus lattice constant of the III–V semiconductor material system. Reproduced with permission from Ref. [10]. Copyright 2013, Miguel ángel Caro Bayo.](/richHtml/jos/2020/41/1/011301/img_1.jpg)
Fig. 1. (Color online) The bandgap energy versus lattice constant of the III–V semiconductor material system. Reproduced with permission from Ref. [10 ]. Copyright 2013, Miguel ángel Caro Bayo.
Fig. 2. (Color online) (a) The number of publications and (b) times cited on BGaAs per year since 2000. Keyword: “BGaAs”. Web of Science search conducted: August 9, 2019.
![(Color online) Calculated bandgap versus lattice-constant for III–V compounds including B-doped alloy. Reproduced with permission from Ref. [26]. Copyright 2019, OSA Publishing.](/Images/icon/loading.gif){kind=icon}
Fig. 3. (Color online) Calculated bandgap versus lattice-constant for III–V compounds including B-doped alloy. Reproduced with permission from Ref. [26 ]. Copyright 2019, OSA Publishing.
Fig. 4. Rocking curves of BGaAs and Bx Ga1–x –y Iny As. Reproduced with permission from Ref. [27 ]. Copyright 2000, AIP Publishing.
Fig. 5. (Color online) XRD rocking curves of the (004) peak for a GaAsBi ternary alloy and BGaAsBi alloy with different boron content. Reproduced with permission from Ref. [29 ]. Copyright 2012, Elsevier.
Fig. 6. (Color online) (a) Apparent boron concentration and (b) surface roughness versus Bi flux for samples. Reproduced with permission from Ref. [30 ]. Copyright 2012, Elsevier.
Fig. 7. AFM images of the surface with increasing boron content. Reproduced with permission from Refs. [17 , 22 ]. Copyright 2003, AIP Publishing.
Fig. 8. (a) Temperature dependence of PL peak energy of BGaAs epilayers. Reproduced with permission from Ref. [36 ]. Copyright 2010, Elsevier. (b) Low-temperature PL spectra of BInGaAs epilayer and quantum well. Reproduced with permission from Ref. [39 ]. Copyright 2012, Elsevier.
Fig. 9. (Color online) Schematic of spatial potential fluctuation and possible paths of carrier movement. Reproduced with permission from Ref. [41 ]. Copyright 2016, Elsevier.
Fig. 10. AFM images of 200 nm BGaAs/GaAs epilayers with various diborane flow-rates. Reproduced with permission from Ref. [44 ]. Copyright 2008, Elsevier.
Fig. 11. Boron composition of BGaAs as a function of boron concentration in the gas phase. Reproduced with permission from Ref. [50 ]. Copyright 2008, Elsevier.
Fig. 12. Cross-sectional TEM images of (a) InGaAs/GaAs and (b) BInGaAs/GaAs. Reproduced with permission from Ref. [24 ]. Copyright 2013, AIP Publishing.
Fig. 13. (a) X-ray rocking curve of a BGaAs ternary. (b) Boron composition as a function of substrate temperature. Reproduced with permission from Ref. [54 ]. Copyright 2004, Elsevier.
Fig. 14. (Color online) AFM images for BGaAs grown at different conditions. Reproduced with permission from Ref. [50 ]. Copyright 2017, Elsevier.
Fig. 15. (Color online) (a) I–V measurements on nanowires with and without boron; (b) TEM image of nanowires. Reproduced with permission from Ref. [50 ]. Copyright 2019, John Wiley and Sons.
Fig. 16. (Color online) (a) ω –2θ scans of BGaAs films grown on a GaP buffer. (b) Reciprocal space mapping (RSM) of BGaAs layers grown on a GaP buffer. Reproduced with permission from Ref. [50 ]. Copyright 2018, IEEE.
Fig. 17. (Color online) XRD of BGaAs films grown on GaAs substrates. Reproduced with permission from Ref. [26 ]. Copyright 2019, OSA Publishing.
Fig. 18. (Color online) Room temperature photoluminescence of BGaAs and BGaInAs alloy. Reproduced with permission from Ref. [26 ]. Copyright 2019, OSA Publishing.
Fig. 19. Comparison of the boron concentration in GaP and GaAs. Reproduced with permission Ref. [50 ]. Copyright 2013, Elsevier.
Fig. 20. A comparison of calculated mixing enthalpies for GaAs1−x Nx and Bx Ga1−x As. Reproduced with permission from Ref. [59 ]. Copyright 2000, AIP Publishing.
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Table 1. Calculated bowing b tot as well as its three contributions in eV. Reproduced with permission from Ref. [23 ]. Copyright 2007, Elsevier.
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