Doping organic hole-transport materials for high-performance perovskite solar cells

Dongmei He; Shirong Lu; Juan Hou; Cong Chen; Jiangzhao Chen; Liming Ding

doi:10.1088/1674-4926/44/2/020202

Journals >Journal of Semiconductors >Volume 44 >Issue 2 >Page 020202 > Article

Journal of Semiconductors
Vol. 44, Issue 2, 020202 (2023)

Doping organic hole-transport materials for high-performance perovskite solar cells

Dongmei He¹, Shirong Lu², Juan Hou^3、*, Cong Chen^4、**, Jiangzhao Chen^1、***, and Liming Ding^5、****

Author Affiliations

¹Key Laboratory of Optoelectronic Technology & Systems (MoE), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China

²Department of Material Science and Technology, Taizhou University, Taizhou 318000, China

³Department of Physics, Shihezi University, Shihezi 832003, China

⁴State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300401, China

⁵Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China

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DOI: 10.1088/1674-4926/44/2/020202 Cite this Article

Dongmei He, Shirong Lu, Juan Hou, Cong Chen, Jiangzhao Chen, Liming Ding. Doping organic hole-transport materials for high-performance perovskite solar cells[J]. Journal of Semiconductors, 2023, 44(2): 020202 Copy Citation Text

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(Color online) (a) Comparison between the conventional and ion-modulated (IM) radical doping strategies. (b)J–V characteristics for SnO2-based PSCs (under different doping). (c)J–V curves for TiO2-based PSCs (conventional dopingvs IM radical doping). (d) Moisture stability for unencapsulated PSCs under 70 ± 5% humidity (conventional dopingvs IM radical doping). (e) Thermal stability for the unsealed devices at 70 ± 3 °C. Reproduced with permission[2], Copyright 2022, American Association for the Advancement of Science.

Fig. 1. (Color online) (a) Comparison between the conventional and ion-modulated (IM) radical doping strategies. (b)J–V characteristics for SnO₂-based PSCs (under different doping). (c)J–V curves for TiO₂-based PSCs (conventional dopingvs IM radical doping). (d) Moisture stability for unencapsulated PSCs under 70 ± 5% humidity (conventional dopingvs IM radical doping). (e) Thermal stability for the unsealed devices at 70 ± 3 °C. Reproduced with permission^[2], Copyright 2022, American Association for the Advancement of Science.

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(Color online) (a) Molecular structures for PTAA, F4TCNQ and LiHFDF. (b) Cross-sectional SEM image for PSCs with HFDF-HTL. (c)J–V curves for PSCs (Li-HTLvs HFDF-HTL). (d) Moisture stability for unsealed PSCs under AM1.5G radiation and ~50% RH (Li-HTLvs HFDF-HTL). (e) Thermal stability for the encapsulated devices with different HTLs under AM1.5G illumination at 85 °C. Reproduced with permission[16], Copyright 2022, American Association for the Advancement of Science.

Fig. 2. (Color online) (a) Molecular structures for PTAA, F4TCNQ and LiHFDF. (b) Cross-sectional SEM image for PSCs with HFDF-HTL. (c)J–V curves for PSCs (Li-HTLvs HFDF-HTL). (d) Moisture stability for unsealed PSCs under AM1.5G radiation and ~50% RH (Li-HTLvs HFDF-HTL). (e) Thermal stability for the encapsulated devices with different HTLs under AM1.5G illumination at 85 °C. Reproduced with permission^[16], Copyright 2022, American Association for the Advancement of Science.

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