• Laser & Optoelectronics Progress
  • Vol. 57, Issue 11, 111428 (2020)
Zhaodi Chen, Jichao Li, Shanlin Xiao, Han Yang**, Yuchen Zhang, Ziying Zhao, and Yonglai Zhang*
Author Affiliations
  • State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, Jilin 130012, China
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    DOI: 10.3788/LOP57.111428 Cite this Article Set citation alerts
    Zhaodi Chen, Jichao Li, Shanlin Xiao, Han Yang, Yuchen Zhang, Ziying Zhao, Yonglai Zhang. Laser Reduced Graphene Oxide for Thin Film Flexible Electronic Devices[J]. Laser & Optoelectronics Progress, 2020, 57(11): 111428 Copy Citation Text show less

    Abstract

    In recent years, the graphene has gradually become a versatile material for flexible electronic devices because of its advantages such as excellent flexibility, transparency, conductivity, and mechanical strength. Laser processing technology has played an increasingly important role in the field of preparing graphene thin film flexile electronic devices due to its high processing accuracy, programmable, flexible direct write, and other characteristics. This paper first reviews the basic principles of laser reduction of graphene oxide and the research progress of laser reduced graphene oxide (LRGO) properties such as oxygen content, conductivity, patterning, structuring, and heteroatom doping. Then, typical LRGO based flexible electronic devices including sensors, supercapacitors, generators are summarized. Finally, the limitations of this technologies are put forward and their future development is prospected.
    Zhaodi Chen, Jichao Li, Shanlin Xiao, Han Yang, Yuchen Zhang, Ziying Zhao, Yonglai Zhang. Laser Reduced Graphene Oxide for Thin Film Flexible Electronic Devices[J]. Laser & Optoelectronics Progress, 2020, 57(11): 111428
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