Zinan Zhang, Sikun Li, Xiangzhao Wang. Research Progress on the Imaging of Three-Dimensional Mask for Extreme Ultraviolet Lithography[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922021
- Laser & Optoelectronics Progress
- Vol. 59, Issue 9, 0922021 (2022)
![Schematic of EUV optics[27]](/richHtml/lop/2022/59/9/0922021/img_01.jpg)
Fig. 1. Schematic of EUV optics[27]
Fig. 2. Schematic of TCC
![Schematic of sampling grid method[41]](/Images/icon/loading.gif){kind=icon}
Fig. 3. Schematic of sampling grid method[41]
Fig. 4. Source sampling method of HHA model[43]
Fig. 5. Principles of BL model[61]
Fig. 6. Principles of M3D model proposed by ASML[42]
Fig. 7. Calibration method of the boundary filters in M3D+ model[45]
Fig. 8. Computation principle of the 3D mask signals in Mask3D OAI model[67]
Fig. 9. Principle of the pattern decomposition methods[12]
Fig. 10. Principle of edge-DDM model[73]
Fig. 11. EUV 3D mask imaging model based on the GAN[83]
Fig. 12. Principle of the RADICAL model[84]
Fig. 13. Principle of the SDM model[13]
Fig. 14. Principle of the shadowing effect[91]
Fig. 15. SMO flow for EUV lithography proposed by ASML[100]
Fig. 16. SMO flow for EUV lithography based on SL-PSO algorithm[18]
Fig. 17. SMO flow for EUV lithography based on dual edge evolution and partial sampling method[19]
Fig. 18. Principle of the partial sampling method[19]
Fig. 19. Principle of the dual edge evolution method[19]
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