Zhan-Gang Zhang, Zhi-Feng Lei, Teng Tong, Xiao-Hui Li, Song-Lin Wang, Tian-Jiao Liang, Kai Xi, Chao Peng, Yu-Juan He, Yun Huang, Yun-Fei En. Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices [J]. Acta Physica Sinica, 2020, 69(5): 056101-1