Study on the formation mechanism of PtSi film by X-ray diffraction and X-ray photo spectrum

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 30 >Issue 1 >Page 66 > Article

Infrared and Laser Engineering
Vol. 30, Issue 1, 66 (2001)

Study on the formation mechanism of PtSi film by X-ray diffraction and X-ray photo spectrum

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on the formation mechanism of PtSi film by X-ray diffraction and X-ray photo spectrum[J]. Infrared and Laser Engineering, 2001, 30(1): 66 Copy Citation Text

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References

[2] Van der Spiegel J, Wei C S, et al. Fast eadiative processing of platinum silicide[J]. J.Appl.Phys., 1985, 57(2):607～609.

[3] Morgan S J, Mooney J M, et al. An XPS study of thin Pt and Ir silicide overlayer formation on Si(100) surfaces[J]. Applied Surface Science, 1992, 56～58:493～500.

[4] TH. Fiohr and Schulz M. Infrared absorption in PtSi-Si interface states[J]. Appl. Phys. Lett., 1986, 48(22):1534～1535.

[5] Ley L, Wang Y, et al. Initial stages in the formation of PtSi on Si(111) as followed by photoemission and spectroscopic ellipsometry[J]. Thin Solid Films, 1995, 270:561～566.

[6] Das S R, Sheergar K, et al. Thickness Dependence of the Properties and Thermal Stability of PtSi films[J]. Thin Solid Films, 1994, 253:467～472.

[7] Domashevskaya E P, Yu.A.Yunakov et al. Silicide formation in thin film Pt-Si(111) Structure by USXES data[J]. Thin Solid Films, 1997, 298:135～137.

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