• Acta Optica Sinica
  • Vol. 38, Issue 12, 1222002 (2018)
Heng Zhang1、2、*, Sikun Li1、2、*, Xiangzhao Wang1、2、*, and Wei Cheng1、2
Author Affiliations
  • 1 Laboratory of Information Optics and Optelectronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2 University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/AOS201838.1222002 Cite this Article Set citation alerts
    Heng Zhang, Sikun Li, Xiangzhao Wang, Wei Cheng. 3D Rigorous Simulation of Defective Masks used for EUV Lithography via Machine Learning-Based Calibration[J]. Acta Optica Sinica, 2018, 38(12): 1222002 Copy Citation Text show less

    Abstract

    This study proposes a fast simulation method that employs machine learning-based parameter calibration for three-dimensional (3D) rigorous simulation of defective masks in extreme ultraviolet lithography. The parameters of the structure-decomposed fast simulation model for defective mask diffraction are calibrated using machine learning methods, such as random forest and K-nearest neighbors, to improve the simulation accuracy and adaptivity. Herein, rigorous simulation is used as a benchmark standard for the calibration of model parameters. Simulation results of 50 validation contact masks set randomly reveal that the average simulation accuracy of aerial images is increased by 45% after calibration; both calibrated and uncalibrated fast models display better simulation accuracy (improved by 4.3 and 8.7 times, respectively) compared with an advanced single-surface approximation model. By applying defect-compensation simulation to a mask of 44-nm period, the simulation speed of single diffraction of the corrected fast model is ~97 times faster than that of the rigorous simulation when the simulation results are consistent (error is 0.8 nm).
    Heng Zhang, Sikun Li, Xiangzhao Wang, Wei Cheng. 3D Rigorous Simulation of Defective Masks used for EUV Lithography via Machine Learning-Based Calibration[J]. Acta Optica Sinica, 2018, 38(12): 1222002
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