Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

Xiangquan Liu; Jun Zheng; Chaoqun Niu; Taoran Liu; Qinxing Huang; Mingming Li; Diandian Zhang; Yaqing Pang; Zhi Liu; Yuhua Zuo; Buwen Cheng

doi:10.1364/PRJ.456000

Journals >Photonics Research >Volume 10 >Issue 7 >Page 1567 > Article

Photonics Research
Vol. 10, Issue 7, 1567 (2022)

Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors

Xiangquan Liu^1、2, Jun Zheng^1、2、*, Chaoqun Niu^1、2, Taoran Liu^1、2, Qinxing Huang^1、2, Mingming Li^1、2, Diandian Zhang^1、2, Yaqing Pang^1、2, Zhi Liu^1、2, Yuhua Zuo^1、2, and Buwen Cheng^1、2

Author Affiliations

¹State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1364/PRJ.456000 Cite this Article Set citation alerts

Xiangquan Liu, Jun Zheng, Chaoqun Niu, Taoran Liu, Qinxing Huang, Mingming Li, Diandian Zhang, Yaqing Pang, Zhi Liu, Yuhua Zuo, Buwen Cheng. Sn content gradient GeSn with strain controlled for high performance GeSn mid-infrared photodetectors[J]. Photonics Research, 2022, 10(7): 1567 Copy Citation Text

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