Shuai-Jun ZHANG, Tian-Xin LI, Wen-Jing WANG, Ju-Zhu LI, Xiu-Mei SHAO, Xue LI, Shi-You ZHENG, Yue-Peng PANG, Hui XIA. SCM study on the 2D diffusion behavior of p-type impurities in planar InGaAs detectors[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021089
- Journal of Infrared and Millimeter Waves
- Vol. 41, Issue 1, 2021089 (2022)
Fig. 1. （a）The schematic diagram of In0.81Ga0.19As/In0.81Al0.19As detector structure，（b）the schematic diagram of In0.53Ga0.47As/InP detector structure
Fig. 2. （a）The SCM images of InGaAs/InAlAs detectors with three different diffusion depths，（b）the photocurrent response of the device with impurity diffusion in the InAlAs capping layer or into the InGaAs absorption layer
Fig. 3. （a）The SCM image of InGaAs/InP P-i-N detector structure，（b）the SCM curve across S1，（c）the SCM curve across S2
Fig. 4. The SCM image of photosensitive elements with connected defects due to the lateral diffusion in InGaAs/InP P-i-N detector
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Table 1. Diffusion temperature and diffusion time of InGaAs samples
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