• Journal of Semiconductors
  • Vol. 40, Issue 9, 092001 (2019)
Wenkai Zhu1、2, Xia Wei1、2, Faguang Yan1、2, Quanshan Lv1、2, Ce Hu1、2, and Kaiyou Wang1、2、3、4
Author Affiliations
  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Science, Beijing 100049, China
  • 4Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    DOI: 10.1088/1674-4926/40/9/092001 Cite this Article
    Wenkai Zhu, Xia Wei, Faguang Yan, Quanshan Lv, Ce Hu, Kaiyou Wang. Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction[J]. Journal of Semiconductors, 2019, 40(9): 092001 Copy Citation Text show less
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    Wenkai Zhu, Xia Wei, Faguang Yan, Quanshan Lv, Ce Hu, Kaiyou Wang. Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction[J]. Journal of Semiconductors, 2019, 40(9): 092001
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