Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

Sh. G. Askerov; L. K. Abdullayeva; M. G. Hasanov

doi:10.1088/1674-4926/41/10/102101

Journals >Journal of Semiconductors >Volume 41 >Issue 10 >Page 102101 > Article

Journal of Semiconductors
Vol. 41, Issue 10, 102101 (2020)

Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

Sh. G. Askerov, L. K. Abdullayeva, and M. G. Hasanov

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Institute for Physical Problems, Baku State University, AZ1148, Baku, Azerbaijan

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DOI: 10.1088/1674-4926/41/10/102101 Cite this Article

Sh. G. Askerov, L. K. Abdullayeva, M. G. Hasanov. Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems[J]. Journal of Semiconductors, 2020, 41(10): 102101 Copy Citation Text

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Fig. 1. Microstructure of the surface of a polycrystalline metal.

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(Color online) Dependence of IS/ST2 on the temperature for TiCu-n/Si SD with different areas.

Fig. 2. (Color online) Dependence of I_S/ST² on the temperature for TiCu-n/Si SD with different areas.

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Fig. 3. (Color online) Dependence of I_S/ST² on the temperature for SD Al -n/Si with the area 7 × 10⁻⁶cm².

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SD	Structure	Area of SD (cm²)	T (K)	B (A/(cm²·K²))
Al–n/Si	Polycrystalline	7 × 10^–6	298	5.8 × 10^–10
TiCu–n/Si	Polycrystalline	7 × 10^–6	298	6.4 × 10^–6
TiCu–n/Si n/Si	Polycrystalline	14 × 10^–6	298	11 × 10^–6
TiCu-n/SiSi	Polycrystalline	3 × 10^–6	298	6.3 × 10^–6
PtSi–n/Si	Monocrystalline	9 × 10^–6	298	5.3 × 10^–7
TiW–n/Si	Amorphous	5 × 10^–6	298	5 × 10^–8

Table 1. Dependents of B on the structure of the metal.

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