Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

Sh. G. Askerov; L. K. Abdullayeva; M. G. Hasanov

doi:10.1088/1674-4926/41/10/102101

Journals >Journal of Semiconductors >Volume 41 >Issue 10 >Page 102101 > Article

Journal of Semiconductors
Vol. 41, Issue 10, 102101 (2020)

Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems

Sh. G. Askerov, L. K. Abdullayeva, and M. G. Hasanov

Author Affiliations

Institute for Physical Problems, Baku State University, AZ1148, Baku, Azerbaijan

show less

DOI: 10.1088/1674-4926/41/10/102101 Cite this Article

Sh. G. Askerov, L. K. Abdullayeva, M. G. Hasanov. Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems[J]. Journal of Semiconductors, 2020, 41(10): 102101 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Abstract

The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact (MSC) in the framework of the theory of complex systems. The effect of inhomogeneity of the different microstructures: polycrystalline, monocrystalline, amorphous metal–semiconductor contact surface is investigated, considering a Schottky diode (SD) as a parallel connection of numerous subdiodes. It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system, which consists of parallel connected numerous elementary contacts having different properties and parameters.

$\bar \Phi = \frac{{{\Phi _1}{S_1} + {\Phi _2}{S_2} + ... + {\Phi _n}{S_n}}}{{{S_1} + {S_2} + ... + {S_n}}} = \frac{{\sum\limits_{i = 1}^n {} {\Phi _i}{S_i}}}{{\sum\limits_{i = 1}^n {} {S_i}}} = \sum\limits_{i = 1}^n {{\Phi _i}{\omega _i}} ,$

(1)