• Journal of Inorganic Materials
  • Vol. 34, Issue 7, 748 (2019)
Yu GUO1、2, Tong-Hua PENG1、2、*, Chun-Jun LIU1, Zhan-Wei YANG1, and Zhen-Li CAI1
Author Affiliations
  • 1Beijing Tankeblue Semiconductor Co. Ltd, Beijing 102600, China
  • 2Xinjiang Tianfu Energy Co. Ltd., Shihezi 832000, China
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    DOI: 10.15541/jim20180443 Cite this Article
    Yu GUO, Tong-Hua PENG, Chun-Jun LIU, Zhan-Wei YANG, Zhen-Li CAI. Correlation between Stacking Faults in Epitaxial Layers of 4H-SiC and Defects in 4H-SiC Substrate[J]. Journal of Inorganic Materials, 2019, 34(7): 748 Copy Citation Text show less
    References

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    Yu GUO, Tong-Hua PENG, Chun-Jun LIU, Zhan-Wei YANG, Zhen-Li CAI. Correlation between Stacking Faults in Epitaxial Layers of 4H-SiC and Defects in 4H-SiC Substrate[J]. Journal of Inorganic Materials, 2019, 34(7): 748
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