Author Affiliations
1College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China2State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing 100029, Chinashow less
Fig. 1. (Color online) The top view of free B atoms at different adsorption sites with one h-BN buffer layer. (a–e) show the initial adsorption sites and (f–j) show the final configurations after optimization.
Fig. 2. (Color online) The top view of free N atoms at different adsorption sites with one h-BN buffer layer. (a–e) show the initial adsorption sites and (f–j) show the final configurations after optimization.
Fig. 3. (Color online) (a–c) The top view and (d–f) front view of the optimized adsorption positions for B atom on the surface with different buffer layers. The SC site is chosen as the initial absorption site for the B atom.
Fig. 4. (Color online) (a–c) The top view and (d–f) front view of the optimized adsorption positions for the N atom on the surface with different buffer layers. The SC site is chosen as the initial absorption site for the B atom.
Fig. 5. (Color online) The probability distribution functions of atomic displacements projected onto the xy plane for (a) the B atom at 300 K, (b) the N atom at 300 K, (c) the B atom at 1573 K and (d) the N atom at 1573 K, respectively. The color scale indicates the distribution probability. The positions of B and N atoms of the buffer layer are marked.
Fig. 6. The MSD curves of (a) B atoms and (b) N atoms on the buffer layer surface at different temperatures.
Free atom | S1 (SC)
| S2 | S3 | S4 (SB-top)
| S5 (SN-top)
|
---|
B | –0.87 | –1.11 | –1.11 | –0.76 | –1.11 | N | –2.05 | –2.05 | –2.05 | –0.77 | –2.02 |
|
Table 1. The formation energies (eV) of free B or N atoms at the surface sites of the Al2O3/h-BN-buffer-layer model.
Parameter | 1 buffer layer | 2 buffer layers | 3 buffer layers |
---|
B atom (eV) | –0.87 | –0.14 | 0.01 | N atom (eV) | –2.05 | 0.06 | 0.12 |
|
Table 2. The formation energies of free B and N atoms at the same position on the surface of the Al2O3/h-BN-buffer-layer model in a different number of buffer layers.
Free atom | T (K)
| D (10–9 m2/s)
|
---|
B | 300 | 1.07 | 1573 | 17.04 | N | 300 | 0.35 | 1573 | 7.18 |
|
Table 3. Diffusion coefficients of free atoms on the surface of the model at different temperatures.