• Laser & Optoelectronics Progress
  • Vol. 55, Issue 4, 040201 (2018)
Yue Tang, Ziming Ren, Yunchao Li, Xuwen Hu, Yanjun Zhang, and Shubin Yan*
Author Affiliations
  • Key Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan, Shanxi 030051, China
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    DOI: 10.3788/LOP55.040201 Cite this Article Set citation alerts
    Yue Tang, Ziming Ren, Yunchao Li, Xuwen Hu, Yanjun Zhang, Shubin Yan. Fabrication and Study of Micro Alkali-Metal Vapor Cell Applied to Chip Scale Atomic Clock[J]. Laser & Optoelectronics Progress, 2018, 55(4): 040201 Copy Citation Text show less
    Diagram of ICP etching system
    Fig. 1. Diagram of ICP etching system
    [in Chinese]
    Fig. 1. [in Chinese]
    Deep silicon etching machine. (a) Picture; (b) schematic of inside
    Fig. 2. Deep silicon etching machine. (a) Picture; (b) schematic of inside
    Structures to be etched
    Fig. 3. Structures to be etched
    Flow chart of etching process
    Fig. 4. Flow chart of etching process
    Relationship between etching loop number and etching depth
    Fig. 5. Relationship between etching loop number and etching depth
    3D schematic of silicon pore structure
    Fig. 6. 3D schematic of silicon pore structure
    Schematic of etching results
    Fig. 7. Schematic of etching results
    Picture of bonded alkali-metal vapor cell
    Fig. 8. Picture of bonded alkali-metal vapor cell
    Schematic of experimental principle for saturated absorption
    Fig. 9. Schematic of experimental principle for saturated absorption
    Saturated absorption of micro alkali-metal vapor cell under different temperatures. (a) 50 ℃; (b) 60 ℃; (c) 70 ℃; (d) 80 ℃
    Fig. 10. Saturated absorption of micro alkali-metal vapor cell under different temperatures. (a) 50 ℃; (b) 60 ℃; (c) 70 ℃; (d) 80 ℃
    (a) Schematic of D2 line transition in 87Rb atom; (b) saturated absorption curve of MEMS vapor cell at 80 ℃
    Fig. 11. (a) Schematic of D2 line transition in 87Rb atom; (b) saturated absorption curve of MEMS vapor cell at 80 ℃
    ProcessDurationtime /sPower 1 /WPower 2 /WNumber ofloopsFlow rate of SF6 /(mL·min-1)Flow rate of C4F8 /(mL·min-1)
    Deactivation125001601300
    Etching ofdeactivation layers1.5250022404001
    Main etching53500523009961
    Table 1. Main parameters of deep silicon etching
    Yue Tang, Ziming Ren, Yunchao Li, Xuwen Hu, Yanjun Zhang, Shubin Yan. Fabrication and Study of Micro Alkali-Metal Vapor Cell Applied to Chip Scale Atomic Clock[J]. Laser & Optoelectronics Progress, 2018, 55(4): 040201
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