By using the inductively coupled plasma (ICP) deep silicon etching machine and the anodic bonding system, the alkali-metal vapor cell applied to the chip scale atomic clock (CSAC) is fabricated. With the AZ4620 photoresist as a mask, the silicon surface morphology after deep silicon etching is studied and the deep silicon etching rates under different structures are compared. The micro alkali-metal vapor cell with a sandwich structure is obtained by using the anodic bonding, and the saturation absorption line is detected. The experimental results show that a significant saturated absorption phenomenon is observed in the fabricated micro alkali-metal vapor cell when the temperature is 80 ℃.