Brief Review of Development and Techniques for High Power Semiconductor Lasers

Yongqiang Ning; Yongyi Chen; Jun Zhang; Yue Song; Yuxin Lei; Cheng Qiu; Lei Liang; Peng Jia; Li Qin; Lijun Wang

doi:10.3788/AOS202141.0114001

Journals >Acta Optica Sinica >Volume 41 >Issue 1 >Page 0114001 > Article

Acta Optica Sinica
Vol. 41, Issue 1, 0114001 (2021)

Brief Review of Development and Techniques for High Power Semiconductor Lasers

Yongqiang Ning, Yongyi Chen^*, Jun Zhang^**, Yue Song, Yuxin Lei, Cheng Qiu, Lei Liang, Peng Jia, Li Qin, and Lijun Wang

Author Affiliations

State Key Laboratory of Luminescence and Application, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, China

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DOI: 10.3788/AOS202141.0114001 Cite this Article Set citation alerts

Yongqiang Ning, Yongyi Chen, Jun Zhang, Yue Song, Yuxin Lei, Cheng Qiu, Lei Liang, Peng Jia, Li Qin, Lijun Wang. Brief Review of Development and Techniques for High Power Semiconductor Lasers[J]. Acta Optica Sinica, 2021, 41(1): 0114001 Copy Citation Text

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Lasers	CW output power /W	Beam quality /(mm·mrad)	Lightness /[MW/(cm²·sr)]	Company
CO₂ lasers	12000	12.83	739	Trumpf(Germany)
Disk lasers	12000	4	7607	Trumpf(Germany)
Fiber lasers	12000	0.34	1052844	IPG(USA)
Spectral beam combing	12000	4	7607	Teradiode(USA)

Table 1. Brightness comparison of various lasers under 12 kW continuous power

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