Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition

Caiyun Chen; Hong Qiao; Yunzhou Xue; Wenzhi Yu; Jingchao Song; Yao Lu; Shaojuan Li; Qiaoliang Bao

doi:10.1364/PRJ.3.000110

Journals >Photonics Research >Volume 3 >Issue 4 >Page 110 > Article

Photonics Research
Vol. 3, Issue 4, 110 (2015)

Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition

Caiyun Chen¹, Hong Qiao¹, Yunzhou Xue¹, Wenzhi Yu¹..., Jingchao Song², Yao Lu¹, Shaojuan Li¹ and Qiaoliang Bao^1,2,*|Show fewer author(s)

Author Affiliations

¹Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China

²Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia

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DOI: 10.1364/PRJ.3.000110 Cite this Article Set citation alerts

Caiyun Chen, Hong Qiao, Yunzhou Xue, Wenzhi Yu, Jingchao Song, Yao Lu, Shaojuan Li, Qiaoliang Bao, "Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition," Photonics Res. 3, 110 (2015) Copy Citation Text

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Material characterizations of MoS2; (a) schematic diagram showing the chemical synthesis of MoS2; (b–d) SEM images showing different growth stages of MoS2 with different reaction times of 5, 12, and 30 min, respectively. Scale bars, 10 μm; (e) AFM topography of MoS2 film on SiO2 substrate. Bottom and top white profiles indicate bilayer and trilayers, respectively. Scale bar, 1 μm; (f) optical image of large-area MoS2 film transferred onto PDMS substrate.

Fig. 1. Material characterizations of MoS2; (a) schematic diagram showing the chemical synthesis of MoS2; (b–d) SEM images showing different growth stages of MoS2 with different reaction times of 5, 12, and 30 min, respectively. Scale bars, 10 μm; (e) AFM topography of MoS2 film on SiO2 substrate. Bottom and top white profiles indicate bilayer and trilayers, respectively. Scale bar, 1 μm; (f) optical image of large-area MoS2 film transferred onto PDMS substrate.

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Spectroscopic characterizations of MoS2 films; (a) Raman spectra of few-layer MoS2 on SiO2/Si substrate; (b) PL spectrum of few-layer MoS2 film; (c) UV−visible spectrum of few-layer MoS2 film on quartz.

Fig. 2. Spectroscopic characterizations of MoS2 films; (a) Raman spectra of few-layer MoS2 on SiO2/Si substrate; (b) PL spectrum of few-layer MoS2 film; (c) UV−visible spectrum of few-layer MoS2 film on quartz.

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$(a) TEM image showing folded MoS2 film. Scale bar, 100 nm; (b) HRTEM image of MoS2 film. Scale bar, 5 nm. Inset, corresponding electron diffraction pattern; (c) XPS spectrum of MoS2 thin film; (d) XRD result for MoS2 thin film.$

Fig. 3. (a) TEM image showing folded MoS2 film. Scale bar, 100 nm; (b) HRTEM image of MoS2 film. Scale bar, 5 nm. Inset, corresponding electron diffraction pattern; (c) XPS spectrum of MoS2 thin film; (d) XRD result for MoS2 thin film.

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Fig. 4. (a) Typical transfer curve for MoS2 transistor. Inset, optical image of a FET device. Scale bar, 100 μm; (b) output curve for MoS2 transistor.

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