Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition

Caiyun Chen; Hong Qiao; Yunzhou Xue; Wenzhi Yu; Jingchao Song; Yao Lu; Shaojuan Li; Qiaoliang Bao

doi:10.1364/PRJ.3.000110

Journals >Photonics Research >Volume 3 >Issue 4 >Page 110 > Article

Photonics Research
Vol. 3, Issue 4, 110 (2015)

Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition

Caiyun Chen¹, Hong Qiao¹, Yunzhou Xue¹, Wenzhi Yu¹, Jingchao Song², Yao Lu¹, Shaojuan Li¹, and Qiaoliang Bao^1、2、*

Author Affiliations

¹Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China

²Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia

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DOI: 10.1364/PRJ.3.000110 Cite this Article Set citation alerts

Caiyun Chen, Hong Qiao, Yunzhou Xue, Wenzhi Yu, Jingchao Song, Yao Lu, Shaojuan Li, Qiaoliang Bao. Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition[J]. Photonics Research, 2015, 3(4): 110 Copy Citation Text

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