• Photonics Research
  • Vol. 3, Issue 4, 110 (2015)
Caiyun Chen1, Hong Qiao1, Yunzhou Xue1, Wenzhi Yu1, Jingchao Song2, Yao Lu1, Shaojuan Li1, and Qiaoliang Bao1、2、*
Author Affiliations
  • 1Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China
  • 2Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia
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    DOI: 10.1364/PRJ.3.000110 Cite this Article Set citation alerts
    Caiyun Chen, Hong Qiao, Yunzhou Xue, Wenzhi Yu, Jingchao Song, Yao Lu, Shaojuan Li, Qiaoliang Bao. Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition[J]. Photonics Research, 2015, 3(4): 110 Copy Citation Text show less
    References

    [1] D. Lembke, A. Kis. Breakdown of high-performance monolayer MoS2 transistors. ACS Nano, 6, 10070-10075(2012).

    [2] H. Schmidt, S. Wang, L. Chu, M. Toh, R. Kumar, W. Zhao, A. H. Castro Neto, J. Martin, S. Adam, B. Özyilmaz. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett., 14, 1909-1913(2014).

    [3] B. W. Baugher, H. O. Churchill, Y. Yang, P. Jarillo-Herrero. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. Nano Lett., 13, 4212-4216(2013).

    [4] A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, F. Wang. Emerging photoluminescence in monolayer MoS2. Nano Lett., 10, 1271-1275(2010).

    [5] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-layer MoS2 transistors. Nat. Nanotechnol., 6, 147-150(2011).

    [6] S. Balendhran, J. Z. Ou, M. Bhaskaran, S. Sriram, S. Ippolito, Z. Vasic, E. Kats, S. Bhargava, S. Zhuiykov, K. Kalantar-Zadeh. Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method. Nanoscale, 4, 461-466(2012).

    [7] M. Chhowalla, H. S. Shin, G. Eda, L. J. Li, K. P. Loh, H. Zhang. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem., 5, 263-275(2013).

    [8] K. Kaasbjerg, K. S. Thygesen, K. W. Jacobsen. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys. Rev. B, 85, 115317(2012).

    [9] S. Ghatak, A. N. Pal, A. Ghosh. Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano, 5, 7707-7712(2011).

    [10] H. Liu, A. T. Neal, P. D. Ye. Channel length scaling of MoS2 MOSFETs. ACS Nano, 6, 8563-8569(2012).

    [11] H. Hwang, H. Kim, J. Cho. MoS2 nanoplates consisting of disordered graphene-like layers for high rate lithium battery anode materials. Nano Lett., 11, 4826-4830(2011).

    [12] Y. Yao, Z. Lin, Z. Li, X. Song, K.-S. Moon, C.-P. Wong. Large-scale production of two-dimensional nanosheets. J. Mater. Chem., 22, 13494-13499(2012).

    [13] J. N. Coleman, M. Lotya, A. O’Neill, S. D. Bergin, P. J. King, U. Khan, K. Young, A. Gaucher, S. De, R. J. Smith. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science, 331, 568-571(2011).

    [14] S. Wu, C. Huang, G. Aivazian, J. S. Ross, D. H. Cobden, X. Xu. Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization. ACS Nano, 7, 2768-2772(2013).

    [15] Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, J. Lou. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small, 8, 966-971(2012).

    [16] K. K. Liu, W. Zhang, Y. H. Lee, Y. C. Lin, M. T. Chang, C. Y. Su, C. S. Chang, H. Li, Y. Shi, H. Zhang. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett., 12, 1538-1544(2012).

    [17] Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. W. Wang, C. S. Chang, L. J. Li. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater., 24, 2320-2325(2012).

    [18] Y. Yu, C. Li, Y. Liu, L. Su, Y. Zhang, L. Cao. Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep., 3, 1866(2013).

    [19] J. Zhang, H. Yu, W. Chen, X. Tian, D. Liu, M. Cheng, G. Xie, W. Yang, R. Yang, X. Bai. Scalable growth of high-quality polycrystalline MoS2-monolayers on SiO2 with tunable grain sizes. ACS Nano, 8, 6024-6030(2014).

    [20] Q. Ji, Y. Zhang, T. Gao, Y. Zhang, D. Ma, M. Liu, Y. Chen, X. Qiao, P.-H. Tan, M. Kan. Epitaxial monolayer MoS2 on mica with novel photoluminescence. Nano Lett., 13, 3870-3877(2013).

    [21] D.-S. Tsai, K. K. Liu, D. H. Lien, M. L. Tsai, C. F. Kang, C. A. Lin, L. J. Li, J. H. He. Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments. ACS Nano, 7, 3905-3911(2013).

    [22] H. Li, Q. Zhang, C. C. R. Yap, B. K. Tay, T. H. T. Edwin, A. Olivier, D. Baillargeat. From bulk to monolayer MoS2: Evolution of Raman scattering. Adv. Funct. Mater., 22, 1385-1390(2012).

    [23] X. Zhang, W. Han, J. Wu, S. Milana, Y. Lu, Q. Li, A. Ferrari, P. Tan. Raman spectroscopy of shear and layer breathing modes in multilayer MoS2. Phys. Rev. B, 87, 115413(2013).

    [24] H. Li, Z. Yin, Q. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, H. Zhang. Fabrication of single-and multilayer MoS2 film-based field-effect transistors for sensing no at room temperature. Small, 8, 63-67(2012).

    [25] X. Wang, H. Feng, Y. Wu, L. Jiao. Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J. Am. Chem. Soc., 135, 5304-5307(2013).

    [26] C. Altavilla, M. Sarno, P. Ciambelli. A novel wet chemistry approach for the synthesis of hybrid 2D free-floating single or multilayer nanosheets of MS2 @ oleylamine (M, Mo, W). Chem. Mater., 23, 3879-3885(2011).

    [27] K. Novoselov, D. Jiang, F. Schedin, T. Booth, V. Khotkevich, S. Morozov, A. Geim. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. USA, 102, 10451-10453(2005).

    [28] J. Lin, J. Zhong, S. Zhong, H. Li, H. Zhang, W. Chen. Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers. Appl. Phys. Lett., 103, 063109(2013).

    CLP Journals

    [1] Xingxing Liu, Shaowei Wang, Hui Xia, Xutao Zhang, Ruonan Ji, Tianxin Li, Wei Lu. Interference-aided spectrum-fitting method for accurate film thickness determination[J]. Chinese Optics Letters, 2016, 14(8): 081203

    Caiyun Chen, Hong Qiao, Yunzhou Xue, Wenzhi Yu, Jingchao Song, Yao Lu, Shaojuan Li, Qiaoliang Bao. Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition[J]. Photonics Research, 2015, 3(4): 110
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