• Journal of Infrared and Millimeter Waves
  • Vol. 36, Issue 2, 167 (2017)
CHENG Wei*, ZHANG You-Tao, WANG Yuan, NIU Bin, LU Hai-Yan, CHANG Long, and XIE Jun-Ling
Author Affiliations
  • [in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2017.02.008 Cite this Article
    CHENG Wei, ZHANG You-Tao, WANG Yuan, NIU Bin, LU Hai-Yan, CHANG Long, XIE Jun-Ling. 0.5 μm InP DHBT technology for 100 GHz+ mixed signal integrated circuits[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 167 Copy Citation Text show less
    References

    [1] Griffith Z, Urteaga M, Pierson R, et al. A 204.8GHz Static Divide-by-8 Frequency Divider in 250nm InP HBT[C]. in IEEE Compound Semiconductor Integrated Circuit Symposium (Monterey, CA 3-6 Oct 2010), p. 1.

    [2] Griffith Z, Urteaga M, Rowell P, et al. A 23.2 dBm at 210 GHz to 21.0 dBm at 235 GHz 16-way PA-cell combined InP HBT SSPA MMIC[C]. in IEEE Compound Semiconductor Integrated Circuit Symposium, La Jolla, CA. 19-22 Oct 2014, p. 1.

    [3] Zhang Y, Li X, Zhang M, et al. A 83 GHz InP DHBT Static Frequency Divider[J]. Journal of Semiconductors,2014, 35(4), 045004.

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    [5] Su Y, Jin Z, Cheng W. et al. An InGaAs/InP 40 GHz CML Static Frequency Divider[J].Journal of Semiconductors,2011,32(3):035008.

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    [7] Cheng W, Jin Z, Su Y, et al. Composite-collector InGaAs/InP double heterostructure bipolar transistors with current-gain cut-off frequency of 242 GHz [J]. Chinese Physics Letter, 2009, 26(3):038502.

    [8] Willen B, Rohner M, Schwarz V, et al. Experimental evaluation of the InP-InGaAs-HBT power-gain resonance[J]. IEEE Electron Device Letters, 2002, 23:579.

    [9] Cheng W, Wang Y, Zhao Y, et al. A THz InGaAs/InP double heterojunction bipolar transistor with fmax of 416GHz[J]. Research and Progress of Solid State Electronics, 2013, 33:F0003.

    [10] Cheng W, Zhao Y, Gao H, et al. High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with fmax=256 GHz and BVCEO=8.3 V[J]. Journal of Semiconductors, 2012, 33(1):56.

    CHENG Wei, ZHANG You-Tao, WANG Yuan, NIU Bin, LU Hai-Yan, CHANG Long, XIE Jun-Ling. 0.5 μm InP DHBT technology for 100 GHz+ mixed signal integrated circuits[J]. Journal of Infrared and Millimeter Waves, 2017, 36(2): 167
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