A high performance 3-inch 0.5 μm InP double heterojunction bipolar transistor (DHBT) technology with three interconnect layers has been developed. The epitaxial layer structure and geometry parameters of the device were carefully studied to get the needed performance. The 0.5 μm×5μm InP DHBTs demonstrated ft = 350 GHz, fmax= 532 GHz and BVCEO= 4.8 V, which were modeled using Agilent-HBT large signal model. Static and dynamic frequency dividers designed and fabricated with this technology have demonstrated maximum clock frequencies of 114 GHz and 170 GHz, respectively. The ultra high speed 0.5 μm InP DHBT technology offers a combination of ultra high speed and high breakdown voltage, which makes it an ideal candidate for next generation 100 GHz+ mixed signal integrated circuits.