• Journal of Semiconductors
  • Vol. 41, Issue 1, 010301 (2020)
Ning Zhuo, Fengqi Liu, and Zhanguo Wang
Author Affiliations
  • Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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    DOI: 10.1088/1674-4926/41/1/010301 Cite this Article
    Ning Zhuo, Fengqi Liu, Zhanguo Wang. Quantum cascade lasers: from sketch to mainstream in the mid and far infrared[J]. Journal of Semiconductors, 2020, 41(1): 010301 Copy Citation Text show less
    (Color online) (a) Basic four-level system for intersubband lasers and (b) fast LO-phonon scattering process between and in subbands.
    Fig. 1. (Color online) (a) Basic four-level system for intersubband lasers and (b) fast LO-phonon scattering process between and in subbands.
    (Color online) (a) Typical mid infrared QCL structure and (b) subband diagram of gain region under applied electric field.
    Fig. 2. (Color online) (a) Typical mid infrared QCL structure and (b) subband diagram of gain region under applied electric field.
    (Color online) Representative evolution roadmaps for (a) multi quantum wells design (Refs. [2, 5, 8]) and (b) superlattice design (Refs. [3, 6, 11]).
    Fig. 3. (Color online) Representative evolution roadmaps for (a) multi quantum wells design (Refs. [2, 5, 8]) and (b) superlattice design (Refs. [3, 6, 11]).
    (Color online) Schematic of (a) a quantum dot cascade laser and (b) energy band structures of quantum wells and quantum dots-based active region.
    Fig. 4. (Color online) Schematic of (a) a quantum dot cascade laser and (b) energy band structures of quantum wells and quantum dots-based active region.
    Ning Zhuo, Fengqi Liu, Zhanguo Wang. Quantum cascade lasers: from sketch to mainstream in the mid and far infrared[J]. Journal of Semiconductors, 2020, 41(1): 010301
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