[1] J Jin, J Shi, B L Ai et al. A highly linear power amplifier for WLAN. J Semicond, 37, 025006(2016).
[2] J Gong, W Li, J T Hu et al. An 8–18 GHz power amplifier with novel gain fluctuation compensation technique in 65 nm CMOS. J Semicond, 39, 125008(2018).
[3] J S Park, Y J Wang, S Pellerano et al. A CMOS wideband current-mode digital polar power amplifier with built-in AM–PM distortion self-compensation. IEEE J Solid-State Circuits, 53, 340(2018).
[4] H Wang, s C Sideris, i A Hajimiri et al. A CMOS broadband power amplifier with a transformer-based high-order output matching network. IEEE J Solid-State Circuits, 45, 2709(2018).
[5] J Xia, g X Fang, a S Boumaiza. 60-GHz power amplifier in 45-nm SOI-CMOS using stacked transformer-based parallel power combiner. IEEE Microwave Wireless Compons Lett, 28, 711(2018).
[6] H T Ahn, t D J Allstot. A 0.5–8.5-GHz fully differential CMOS distributed amplifier. IEEE J Solid-State Circuits, 37, 985(2002).
[7]
[8] P C Huang, Z M Tsai, K Y Lin et al. A high-efficiency, broadband CMOS power amplifier for cognitive radio applications. Trans Microwave Theory Tech, 58, 3556(2010).
[9]
[10] H F Wu, X J Liao, Q Lin et al. A compact ultrabroadband stacked traveling-wave GaN on Si power amplifier. IEEE Trans Microwave Theory Tech, 66, 3306(2018).
[11] F Thome, A Leuther, M Schlechtweg et al. Broadband high-power W-band amplifier MMICs based on stacked-HEMT unit cells. Trans Microwave Theory Tech, 66, 1312(2018).
[12] C Wu, Y Lin, o Y Hsiao et al. Design of a 60-GHz high-output power stacked- FET power amplifier using transformer-based voltage-type power combining in 65-nm CMOS. Trans Microwave Theory Tech, 66, 4595(2018).
[13] S Pornpromlikit, J Jeong, C D Presti et al. A Watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS. IEEE Trans Microwave Theory Tech, 58, 57(2010).
[14]
[15] H T Dabag, B Hanafi, F Golcuk et al. Analysis and design of stacked-FET millimeter-wave power amplifiers. IEEE Trans Microwave Theory Tech, 61, 1543(2013).
