Hao Wu, Xuanwu Kang, Yingkui Zheng, Ke Wei, Lin Zhang, Xinyu Liu, Guoqi Zhang. Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis[J]. Journal of Semiconductors, 2022, 43(6): 062803
- Journal of Semiconductors
- Vol. 43, Issue 6, 062803 (2022)
Fig. 1. (Color online) (a) Schematic cross-section of the fabricated recess-free AlGaN/GaN SBD. I –V characteristics of device A and B at RT on the (b) log scale and (c) linear scale. (d) I –V characteristics of 8 devices for A and B.
Fig. 2. (Color online) Temperature-dependent I –V characteristics of (a) device A and (b) device B. (c) Dependence of n and qφ b on the temperature for both devices. (d) The dependence of qφ b on n for two diodes; the extrapolation at n = 1 of the linear fit of the data gives a value of the mean barrier height.
Fig. 3. (Color online) (a) Arrhenius plot of I R for both devices. (b) E A extracted from the Arrhenius plot.
Fig. 4. (Color online) (a) 1 MHz C –V characteristics under the reverse bias voltage. (b) Calculated E –V characteristics under the reverse bias voltage.
Fig. 5. (Color online) ln(J /E ) versus E 0.5 at different temperatures for (a) device A and (b) device B. (c) Extracted ε s(h) at different temperatures for both devices.
Fig. 6. (Color online) ln (J /E ) versus 1000/T at various temperatures for (a) device A and (b) device B. Extracted qφ eff(E ) at various temperatures for (c) device A and (d) device B.
Fig. 7. (Color online) ln(J /E 2) versus 1/E at low temperature for (a) device A and (b) device B. (c) Extracted qφ b from the slope at various temperatures for both devices. (d) Impact of β on qφ b extracted by FN model for Ni SBD.
Fig. 8. (Color online) Schematic band diagram of carrier transport mechanisms at reverse bias for TiN SBD and Ni/Au SBD.
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