Author Affiliations
1Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi’an 710071, China2Key Laboratory for Informatization Electrical Appliances of Henan Province, School of Electric and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China3State Key Laboratory of Power Grid Security and Energy Conservation, China Electric Power Research Institute, Beijing 100192, Chinashow less
Fig. 1. 3D schematics of the designed GeSn photodetectors based on different architectures.
(
a) GeSn on SOUP waveguide integrated with the Si
3N
4 liner stressor. Three-dimensional schematics of GeSn detectors with (
b) pillar and (
c) fin array integrated with the Si
3N
4 liner stressor on Si platform. Figure reproduced from: (
a) ref.
26, Optical Society of America; (
b,
c) ref.
33, IEEE.
Fig. 2. E-k energy band diagrams of relaxed and strained GeSn devices.
(
a) Relaxed Ge
0.90Sn
0.10. (
b) Tensile strained Ge
0.90Sn
0.10 in fin array detector with the
Lpillar of 200 nm. (
c) Tensile strained Ge
0.90Sn
0.10 in pillar array detector with the
Lpillar of 200 nm. (
d) Tensile strained Ge
0.90Sn
0.10 on SOUP waveguide. Figure reproduced from: (
a,
b,
c) ref.
33, IEEE; (d) ref.
26, Optical Society of America.
Fig. 3. (
a) Comparisons of the absorption spectra of relaxed and strained GeSn in fin and pillar array detectors at the Sn content of 0.1.
Lpillar and
Tfin feature size varys from 100 nm to 500 nm in a step of 100 nm. (
b) Calculated absorption spectra for relaxed and tensile strained GeSn waveguide photodetectors at different Sn content. Figure reproduced from: (
a) ref.
33, IEEE; (
b) ref.
26, Optical Society of America.
Fig. 4. Modeled
α as a function of wavelength at different electric fields at (a) Ge
0.97Sn
0.03, (b) Ge
0.95Sn
0.05, and (c) Ge
0.9Sn
0.1, respectively. Figure reproduced from ref.
26, Optical Society of America.
Fig. 5. Mode profiles of both TE and TM modes at different wavelengths in Ge
0.90Sn
0.10 waveguide. Figure reproduced from ref.
26, Optical Society of America.
Fig. 6. Propagation loss of (a) TE mode and (b) TM mode in tensile strained Ge
0.90Sn
0.10 waveguide at various biases. Figure reproduced from ref.
26, Optical Society of America.
Fig. 7. 3D schematic of the Ge
1-xSn
x/Si
1-y-zGe
ySn
z MQW laser wrapped in a Si
3N
4 liner stressor. Figure reproduced from ref.
36, IEEE.
Fig. 8. Contour plots for (a)
ε[100], (b)
ε[010], and (c)
ε[001] in the normal cross section plane and (d)
ε[100], (e)
ε[010], and (f)
ε[001] in the radial cross section plane in GeSn well for the Ge
0.90Sn
0.10/Si
0.161Ge
0.695Sn
0.144 MQW laser wrapped in a 500 nm Si
3N
4 liner stressor. Figure reproduced from ref.
36, IEEE.
Fig. 9. (
a) Modeled
Jth as a function of the Sn composition in GeSn wells for relaxed and tensile strained GeSn/SiGeSn MQW lasers wrapped in a 500 nm Si
3N
4 liner stressor.
Lz is 7 nm and
nwell is 20. (
b) Modeled optical gain
α as a function of injected current density
J for the relaxed and tensile strained MQW lasers. Figure reproduced from ref.
36, IEEE.
Fig. 10. 3D schematic of lattice-matched GeSn/SiGeSn DH LED wrapped in a Si
3N
4 liner stressor. Figure reproduced from ref.
37, Optical Society of America.
Fig. 11. (
a) Modeled strain components as a function of Sn composition in the intrinsic GeSn layer. (
b) Comparison of
EG, Γ and
EG, L in relaxed and strained GeSn with various Sn compositions. Figure reproduced from ref.
37, Optical Society of America.
Fig. 12. Calculated spontaneous emission spectra for the direct transition of GeSn in the lattice-matched GeSn/SiGeSn DHLEDs (a) under different strain status, (b) with different Sn compositions, (c) with different
ninjected, and (d) with various
ndoping. For all the curves, the stronger and weaker peaks represent
rsp, HH and
rsp, LH, respectively. Figure reproduced from ref.
37, Optical Society of America.
Fig. 13. ηIQE versus Sn composition characteristics of lattice-matched GeSn/SiGeSn DH LEDs with the
τSRH of 100 and 50 ns.
(
a) Relaxed and tensile strained GeSn devices. (
b) Strained GeSn devices wrapped in a Si
3N
4 liner stressor with different values of
ninjected. (
c) Strained devices with different
ndoping. Figure reproduced from ref.
37, Optical Society of America.