[1]
[2] E Oliva, F Dimroth, A W Bett. GaAs converters for high power densities of laserillumination. Prog Photovolt: Res Appl, 16, 289(2008).
[3] V Andreev, V Khvostikov, V Kalinovsky et al. High current density GaAs and GaSb photovoltaic cells for laser power beaming. IEEE World Conference on Photovoltaic Energy Conversion, 761(2003).
[4] S Fafard, F Proulx, M C A York et al. High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%. Appl Phys Lett, 109, 131107(2016).
[5]
[6] C E Valdivia, M M Wilkins, B Bouzazi et al. Five-volt vertically-stacked, single-cell GaAs photonic power converter. Physics, Simulation, Photonic Eng Photovolt Devices IV, 9358, 93580E(2015).
[7] S Safard, M C A York, F Proulx et al. Ultrahigh efficiencies in vertical epitaxial heterostructure architectures. Appl Phys Lett, 108, 071101(2016).
[8] M A Green, J Zhao, A Wang et al. 45 % efficient silicon photovoltaic cell under monochromatic light. IEEE Electron Device Lett, 13, 317(1992).
[9] V P Khvostikov, S V Sorokina, N S Potapovich et al. GaInAsP/InP-based laser power converters (λ = 1064 nm). Semiconductors, 52, 1748(2018).
[10] N Singh, C K F Ho, Y N Leong et al. InAlGaAs/InP-based laser photovoltaic converter at ~1070 nm. IEEE Electron Device Lett, 37, 1154(2016).
[11] S A Mintairov, V M Emelyanov, D V Rybalchenko et al. Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates. Semiconductors, 50, 517(2016).
[12] D V Rybalchenko, S A Mintairov, R A Salii et al. Metamorphic InGaAs photo-converters on GaAs substrates. J Phys: Conf Ser, 690, 012032(2016).
[13] D V Rybalchenko, S A Mintairov, R A Salii et al. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD. Semiconductors, 51, 93(2017).
[14] N A Kaluzhnyy, S A Mintaiov, A M Nadtochiy et al. InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency. Electron Lett, 53, 173(2017).
[15] Y Kim, H B Shin, W H Lee et al. 1080 nm InGaAs laser power converters grown by MOCVD using InAlGaAs metamorphic buffer layers. Sol Energy Mater Sol Cells, 200, 109984(2019).
[16] R Peña, C Algora. One-watt fiber-based power-by-light system for satellite applications. Prog Photovolt: Res Appl, 20, 117(2012).
[17] R Pena, C Algora. The influence of monolithic series connection on the efficiency of GaAs photovoltaic converters for monochromatic illumination. IEEE Trans Electron Devices, 48, 196(2001).
[18] C G Guan, W Liu, Q Gao. Influence of the mesa electrode position on monolithic on-chip series-interconnect GaAs laser power converter performance. Mater Sci Semicond Process, 75, 136(2018).
[19] J Schubert, E Oliva, F Dimroth. High-voltage GaAs photovoltaic laser power converters. IEEE Trans Electron Devices, 56, 170(2009).
[20] D Masson, F Proulx, S Fafard. Pushing the limits of concentrated photovoltaic solar cell tunnel junctions in novel high-efficiency GaAs phototransducers based on a vertical epitaxial heterostructure architecture. Prog Photovolts: Res Appl, 239, 1687(2015).
[21] M C A York, F Proulx, D P Masson et al. Thin n/p GaAs junctions for novel high-efficiency phototransducers based on a vertical epitaxial heterostructure architecture. MRS Adv, 1, 881(2016).
[22] S Fafard, F Proulx, M C A York et al. Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent. Physics Simulation Photonic Eng Photovolt Devices V, 9743, 974304(2016).
[23] F Proulx, M C A York, P O Provost et al. Measurement of strong photon recycling in ultra-thin GaAs n/p junctions monolithically integrated in high-photovoltage vertical epitaxial heterostructure architectures with conversion efficiencies exceeding 60%. Phys Status Solidi-Rapid Res Lett, 11, 1600385(2017).
[24] H Burkhard, H W Dinges, E Kuphal. Optical properties of In1–