• Journal of Semiconductors
  • Vol. 41, Issue 6, 062303 (2020)
Jiajing Yin1、2, Yurun Sun1, Shuzhen Yu1, Yongming Zhao1, Rongwei Li1, and Jianrong Dong1
Author Affiliations
  • 1Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2Nano Science and Technology Institute, University of Science and Technology of China, Hefei 230026, China
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    DOI: 10.1088/1674-4926/41/6/062303 Cite this Article
    Jiajing Yin, Yurun Sun, Shuzhen Yu, Yongming Zhao, Rongwei Li, Jianrong Dong. 1064 nm InGaAsP multi-junction laser power converters[J]. Journal of Semiconductors, 2020, 41(6): 062303 Copy Citation Text show less
    Schematic layer structure of the designed triple-junction InGaAsP LPC.
    Fig. 1. Schematic layer structure of the designed triple-junction InGaAsP LPC.
    Calculated I–V and P–V characteristics of the designed triple-junction InGaAsP LPC.
    Fig. 2. Calculated I–V and P–V characteristics of the designed triple-junction InGaAsP LPC.
    Surface reflectance spectrum of the triple-junction InGaAsP LPCs with an antireflection coating.
    Fig. 3. Surface reflectance spectrum of the triple-junction InGaAsP LPCs with an antireflection coating.
    I–V curves of a triple-junction InGaAsP LPC at different input 1064 nm laser power densities.
    Fig. 4. I–V curves of a triple-junction InGaAsP LPC at different input 1064 nm laser power densities.
    External quantum efficiency of the triple-junction InGaAsP LPC.
    Fig. 5. External quantum efficiency of the triple-junction InGaAsP LPC.
    ParameterValue
    Internal quantum efficiency95%
    Surface reflectivity3%
    Grid shadowing3%
    Percentage of incident light be absorbed98.5%
    Optical power intensity (W/cm2) 1
    Ideal factor for InGaAsP pn junction1
    Band gap of InGaAsP (eV)1.08
    Shunt resistance (Ω)600
    Series resistance (Ω)0.2
    Table 1. Parameters for efficiency estimation of triple-junction InGaAsP laser power converter.
    Power density (mW/cm2) Voc (V) Jsc (mA/cm2) Fill factorEfficiency (%)
    6102.12124.860.726531.46
    9892.14202.430.733832.13
    11002.16225.150.738432.60
    12332.16252.380.725232.03
    Table 2. Summary of the parameters of triple-junction InGaAsP LPC at laser power densities of 610, 989, 1100, and 1233 mW/cm2.
    Jiajing Yin, Yurun Sun, Shuzhen Yu, Yongming Zhao, Rongwei Li, Jianrong Dong. 1064 nm InGaAsP multi-junction laser power converters[J]. Journal of Semiconductors, 2020, 41(6): 062303
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