Researching | Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates

Journals >Journal of Semiconductors >Volume 43 >Issue 7 >Page 072101 > Article

Journal of Semiconductors
Vol. 43, Issue 7, 072101 (2022)

Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates

Qiqi Wei^1、2, Hailong Wang^1、2, Xupeng Zhao^1、2, and Jianhua Zhao^{1、2、3、*}

Author Affiliations

¹State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

³CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/43/7/072101 Cite this Article

Qiqi Wei, Hailong Wang, Xupeng Zhao, Jianhua Zhao. Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates[J]. Journal of Semiconductors, 2022, 43(7): 072101 Copy Citation Text

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References

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Qiqi Wei, Hailong Wang, Xupeng Zhao, Jianhua Zhao. Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates[J]. Journal of Semiconductors, 2022, 43(7): 072101

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