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    Journals >Journal of Semiconductors >Volume 40 >Issue 12 >Page 120402 > Article
    • Journal of Semiconductors
    • Vol. 40, Issue 12, 120402 (2019)
    III-nitride based ultraviolet laser diodes
    Degang Zhao1、2
    Author Affiliations
  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/40/12/120402 Cite this Article
    Degang Zhao. III-nitride based ultraviolet laser diodes[J]. Journal of Semiconductors, 2019, 40(12): 120402 Copy Citation Text show less
    Typical epitaxial layer structure of AlGaN-based UV laser diodes.
    Fig. 1. Typical epitaxial layer structure of AlGaN-based UV laser diodes.
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    Degang Zhao. III-nitride based ultraviolet laser diodes[J]. Journal of Semiconductors, 2019, 40(12): 120402
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