A. Menani, L. Dehimi, S. Dehimi, F. Pezzimenti. Modelling and optical response of a compressive-strained AlGaN/GaN quantum well laser diode[J]. Journal of Semiconductors, 2020, 41(6): 062301
- Journal of Semiconductors
- Vol. 41, Issue 6, 062301 (2020)
Fig. 1. Schematic diagram showing the energy band states in the QW: conduction (C), heavy-hole (HH), light-hole (LH), and split-off (SO).
Fig. 2. (Color online) Optical gain spectrum in an Al0.1Ga0.9N/GaN/Al0.1Ga0.9N QW laser as a function of the wavelength for different carrier densities in the active region at T = 300 K. (a) Band-to-band model. (b) 6-band k.p model.
Fig. 3. (Color online) Optical gain spectrum as a function of the Al molar fraction at T = 300 K. (a) Band-to-band model. (b) 6-band k.p model.
Fig. 4. (Color online) Optical gain spectrum as a function of the GaN QW width (x = 0.1 and n = 1 × 1019 cm−3) at T = 300 K.
Fig. 5. (Color online) Dependence of the optical gain on temperature (L w = 40 Å, x = 0.1, and n = 1 × 1019 cm−3). (a) Band-to-band model. (b) 6-band k.p model.
Fig. 6. (Color online) GaN bandgap energy as a function of the temperature.
Fig. 7. (Color online) Threshold current density dependence on temperature (L w= 40 Å, x = 0.1, and n = 1 × 1019 cm−3).
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Table 1. Material parameters for wurtzite nitride binaries at T = 300 K.
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