P. Vigneshwara Raja, N. V. L. Narasimha Murty. Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics[J]. Journal of Semiconductors, 2019, 40(2): 022804
- Journal of Semiconductors
- Vol. 40, Issue 2, 022804 (2019)
Fig. 1. The energy location of the bulk traps (E C – 0.63 eV, E C – 0.89 eV and E C – 1.13 eV) and the interface states (E C – 0.4 eV to E C – 1.04 eV) in the energy band diagram of the Ni/4H-SiC SBDs.
Fig. 2. (Color online) Changes in the TSCAP spectrum for gamma irradiated Ni/4H-SiC SBDs at different annealing temperatures from 400 to 600 °C.
Fig. 3. (Color online) Annealing effects (400–800 °C) on forward current–voltage (I F–V F) characteristics of the gamma irradiated Ni/4H-SiC SBDs.
Fig. 4. (Color online) Changes in the I F–V F characteristics (in semi-log scale) of gamma irradiated Ni/4H-SiC SBDs before and after the annealing temperature of 400 °C.
Fig. 5. (Color online) The distribution of interface state density (N SS) as a function of E C–E SS calculated from the forward I–V characteristics of annealed (400–700 °C) gamma irradiated Ni/4H-SiC SBDs.
Fig. 6. (Color online) Annealing (400–700 °C) induced changes in the reverse current–voltage (I R–V R) characteristics of the gamma irradiated Ni/4H-SiC SBDs.
Fig. 7. (Color online) (1/C 2)–V characteristics at 1 MHz of gamma irradiated Ni/4H-SiC SBDs after heat treatments (400–700 °C).
Fig. 8. (Color online) (1/C 2)–V characteristics at different signal frequencies (1 kHz–1 MHz) of the gamma irradiated Ni/4H-SiC SBDs at the annealing temperatures 400 and 500 °C (shown in inset).
Fig. 9. Typical C–V characteristics (in diode geometrical capacitance range) obtained at all signal frequencies (1 kHz to 1 MHz) of the gamma irradiated Ni/4H-SiC SBDs for the annealing temperatures ≥ 800 °C.
Fig. 10. Typical I–V characteristics (−20 to 20 V) of the gamma irradiated Ni/4H-SiC SBDs at the annealing temperature of 950 °C.
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Table 1. Annealing induced changes in the electrical parameters and trap concentrations of the gamma irradiated Ni/4H-SiC SBDs.
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