• Photonics Research
  • Vol. 11, Issue 2, 143 (2023)
Jingbo Shi1、7、†,*, Ming Jin1、†, Tao Yang2, Haowen Shu1, Fenghe Yang3, Han Liu4, Yuansheng Tao1, Jiangrui Deng1, Ruixuan Chen1, Changhao Han1, Nan Qi4、5、8、*, and Xingjun Wang1、6、9、*
Author Affiliations
  • 1State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics, Peking University, Beijing 100871, China
  • 2College of Engineering, Peking University, Beijing 100871, China
  • 3Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, China
  • 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 5Center of Material Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 6Frontier Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
  • 7e-mail: jingboshi@pku.edu.cn
  • 8e-mail: qinan@semi.ac.cn
  • 9e-mail: xjwang@pku.edu.cn
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    DOI: 10.1364/PRJ.469556 Cite this Article Set citation alerts
    Jingbo Shi, Ming Jin, Tao Yang, Haowen Shu, Fenghe Yang, Han Liu, Yuansheng Tao, Jiangrui Deng, Ruixuan Chen, Changhao Han, Nan Qi, Xingjun Wang. 16-channel photonic–electric co-designed silicon transmitter with ultra-low power consumption[J]. Photonics Research, 2023, 11(2): 143 Copy Citation Text show less
    Proposed SiPh transmitter: (a) hybrid integration; (b) 16-CH MZM; and (c) 8-CH CMOS driver.
    Fig. 1. Proposed SiPh transmitter: (a) hybrid integration; (b) 16-CH MZM; and (c) 8-CH CMOS driver.
    (a) Cross section structure of the SiPh modulator arms. (b) EO bandwidth of the modulator.
    Fig. 2. (a) Cross section structure of the SiPh modulator arms. (b) EO bandwidth of the modulator.
    Proposed distributed CMOS driver: (a) driver architecture; (b) two-tap FFE; and (c) push–pull driver cell.
    Fig. 3. Proposed distributed CMOS driver: (a) driver architecture; (b) two-tap FFE; and (c) push–pull driver cell.
    Measured frequency response of proposed driver: (a) S11; (b) S22; and (c) S21.
    Fig. 4. Measured frequency response of proposed driver: (a) S11; (b) S22; and (c) S21.
    Measured electrical eye diagrams: (a) 32 Gb/s, FFE disabled; (b) 32 Gb/s, FFE enabled; (c) 50 Gb/s, Channel 1; (d) 50 Gb/s, Channel 3; (e) 50 Gb/s, Channel 5; and (f) 50 Gb/s, Channel 7.
    Fig. 5. Measured electrical eye diagrams: (a) 32 Gb/s, FFE disabled; (b) 32 Gb/s, FFE enabled; (c) 50 Gb/s, Channel 1; (d) 50 Gb/s, Channel 3; (e) 50 Gb/s, Channel 5; and (f) 50 Gb/s, Channel 7.
    Experimental setup of the optical characterization. EDFA, erbium-doped fiber amplifier; and PRBS, pseudorandom binary sequence.
    Fig. 6. Experimental setup of the optical characterization. EDFA, erbium-doped fiber amplifier; and PRBS, pseudorandom binary sequence.
    Measured optical eye diagrams: (a) 32 Gb/s, FFE disabled; (b) 32 Gb/s, FFE enabled; (c) 50 Gb/s, Channel 1; (d) 50 Gb/s, Channel 3; (e) 50 Gb/s, Channel 5; and (f) 50 Gb/s, Channel 7.
    Fig. 7. Measured optical eye diagrams: (a) 32 Gb/s, FFE disabled; (b) 32 Gb/s, FFE enabled; (c) 50 Gb/s, Channel 1; (d) 50 Gb/s, Channel 3; (e) 50 Gb/s, Channel 5; and (f) 50 Gb/s, Channel 7.
    Transmitter PlatformLaser BandSignal PatternChannel NumberSwing (VPP)Data Rate (Gb/s)EIC ProcessPower (mW)Efficiency (pJ/bit)
    SiPh MRM [26]OPAM413.011228 nm CMOS676a6.0
    SiPh MZM [37]OPAM4453.1555 nm BiCMOS2905.46
    SiPh MZM [38]ONRZ12.52565 nm CMOS27511.0
    SiPh MZM [39]OPAM415655 nm BiCMOS3005.36
    SiPh MZM [40]ONRZ/PAM424.056130 nm BiCMOS59310.6
    SiPh MZM [41]NRZ/PAM411.85616 nm CMOS70812.6
    SiPh MZM [27]CPAM44200
    SiPh MZM [28]CPAM424.05040 nm CMOS1340b26.8
    SiPh MZM [29]CNRZ110028 nm CMOS2032.03
    SiPh MZM (This work)CNRZ164.05065 nm CMOS267.65.35
    Table 1. Performance Summary and Comparison of SiPh Transmitter
    Jingbo Shi, Ming Jin, Tao Yang, Haowen Shu, Fenghe Yang, Han Liu, Yuansheng Tao, Jiangrui Deng, Ruixuan Chen, Changhao Han, Nan Qi, Xingjun Wang. 16-channel photonic–electric co-designed silicon transmitter with ultra-low power consumption[J]. Photonics Research, 2023, 11(2): 143
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