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Chinese Optics Letters
Vol. 14, Issue 4, 042302 (2016)

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü¹, Yuanjie Lü², Qiang Wang¹, Jianfei Li¹, Zhihong Feng², Xiangang Xu³, and Ziwu Ji^1、*

Author Affiliations

¹School of Physics, Shandong University, Jinan 250100, China

²National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

³Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China

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DOI: 10.3788/COL201614.042302 Cite this Article Set citation alerts

Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(4): 042302 Copy Citation Text

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CLP Journals

[1] Xiang Li, Degang Zhao. Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes[J]. Chinese Optics Letters, 2016, 14(6): 062502

Data from CrossRef

[1] Xin Hou, Shaosheng Fan, Daisuke Iida, Yang Mei, Baoping Zhang, Kazuhiro Ohkawa. Photoluminescence of InGaN-based red multiple quantum wells. Optics Express, 29, 30237(2021).

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Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(4): 042302

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