Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü; Yuanjie Lü; Qiang Wang; Jianfei Li; Zhihong Feng; Xiangang Xu; Ziwu Ji

doi:10.3788/COL201614.042302

Journals >Chinese Optics Letters >Volume 14 >Issue 4 >Page 042302 > Article

Chinese Optics Letters
Vol. 14, Issue 4, 042302 (2016)

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü¹, Yuanjie Lü², Qiang Wang¹, Jianfei Li¹, Zhihong Feng², Xiangang Xu³, and Ziwu Ji^1、*

Author Affiliations

¹School of Physics, Shandong University, Jinan 250100, China

²National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

³Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China

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DOI: 10.3788/COL201614.042302 Cite this Article Set citation alerts

Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(4): 042302 Copy Citation Text

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(a) Cross-sectional HRTEM image of the InGaN/GaN MQWs sample and (b) schematic diagram of the potential distribution in the InGaN/GaN MQWs for describing possible paths of carrier transfer.

Fig. 1. (a) Cross-sectional HRTEM image of the InGaN/GaN MQWs sample and (b) schematic diagram of the potential distribution in the InGaN/GaN MQWs for describing possible paths of carrier transfer.

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Temperature-dependent PL spectra of InGaN/GaN MQWs measured at (a) 0.5 μW and (b) 50 mW. The dashed lines indicate the separate InGaN matrix- and QD-related lines. Two weak peaks, denoted by 1LO and 2LO, are phonon replicas of the main PM peak.

Fig. 2. Temperature-dependent PL spectra of InGaN/GaN MQWs measured at (a) 0.5 μW and (b) 50 mW. The dashed lines indicate the separate InGaN matrix- and QD-related lines. Two weak peaks, denoted by 1LO and 2LO, are phonon replicas of the main PM peak.

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Fig. 3. Temperature dependencies of (a) the emission integrated intensity (ID, IM, and IT), and the peak energy and full width at half maximum (FWHM) for (b) PM peak and for (c) PD peak measured at 0.5 μW. The dashed lines represent Varshni curves.

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Fig. 4. Temperature dependences of (a) IM measured at 3 and 50 mW, and peak energy and FWHM measured at (b) 3 and (c) 50 mW. The dashed lines represent Varshni curves.

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