Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü; Yuanjie Lü; Qiang Wang; Jianfei Li; Zhihong Feng; Xiangang Xu; Ziwu Ji

doi:10.3788/COL201614.042302

Journals >Chinese Optics Letters >Volume 14 >Issue 4 >Page 042302 > Article

Chinese Optics Letters
Vol. 14, Issue 4, 042302 (2016)

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Haiyan Lü¹, Yuanjie Lü², Qiang Wang¹, Jianfei Li¹, Zhihong Feng², Xiangang Xu³, and Ziwu Ji^1、*

Author Affiliations

¹School of Physics, Shandong University, Jinan 250100, China

²National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

³Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China

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DOI: 10.3788/COL201614.042302 Cite this Article Set citation alerts

Haiyan Lü, Yuanjie Lü, Qiang Wang, Jianfei Li, Zhihong Feng, Xiangang Xu, Ziwu Ji. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells[J]. Chinese Optics Letters, 2016, 14(4): 042302 Copy Citation Text

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