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    Journals >Chinese Journal of Quantum Electronics >Volume 19 >Issue 2 >Page 115 > Article
    • Chinese Journal of Quantum Electronics
    • Vol. 19, Issue 2, 115 (2002)
    Surface Photovoltaic Spectra of Strainded InGaAs/GaAs Quantum Well with Different Composition of In and Different Width of Well
    [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Surface Photovoltaic Spectra of Strainded InGaAs/GaAs Quantum Well with Different Composition of In and Different Width of Well[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 115 Copy Citation Text show less
    References

    [3] Shen W Z,Shen S C,Tang W G.Observaion of excitonic polariton and broadening of room-temperature excitonin strained InGaAs/GaAs quantum wells[J].J.Appl.Phys.,1995,78(2): 1178～1182

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Surface Photovoltaic Spectra of Strainded InGaAs/GaAs Quantum Well with Different Composition of In and Different Width of Well[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 115
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