Surface Photovoltaic Spectra of Strainded InGaAs/GaAs Quantum Well with Different Composition of In and Different Width of Well

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 19 >Issue 2 >Page 115 > Article

Chinese Journal of Quantum Electronics
Vol. 19, Issue 2, 115 (2002)

Surface Photovoltaic Spectra of Strainded InGaAs/GaAs Quantum Well with Different Composition of In and Different Width of Well

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Surface Photovoltaic Spectra of Strainded InGaAs/GaAs Quantum Well with Different Composition of In and Different Width of Well[J]. Chinese Journal of Quantum Electronics, 2002, 19(2): 115 Copy Citation Text

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Abstract

In this Article, Surface photovoltage method has been used to measure the photovoltaic effect of strained InGaAs/GaAs quantum well with different composition of In and width of well at different temperature.The transition peaks of PV spectra were identified compared with the theoretical calculation by the kroig-Penny model . The theoretical calculation results agree with the experiment ones.

Keywords

distortion model photovoltaic spectrum strained quantum well

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