• Laser & Optoelectronics Progress
  • Vol. 61, Issue 19, 1913009 (2024)
Bigeng Chen1,*, Ke Li2, Yiru Zhao3, and Shaoliang Yu1
Author Affiliations
  • 1Zhejiang Laboratory, Hangzhou 311121, Zhejiang , China
  • 2Pengcheng Laboratory, Shenzhen 518000, Guangdong , China
  • 3School of Electronic Engineering, Chaohu University, Hefei 238024, Anhui , China
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    DOI: 10.3788/LOP241594 Cite this Article Set citation alerts
    Bigeng Chen, Ke Li, Yiru Zhao, Shaoliang Yu. Research Progress on Silicon Electro-Optical Modulator (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(19): 1913009 Copy Citation Text show less
    Refractive index and absorption coefficient of single crystal silicon at 1.3 μm wavelength band dependent on concentrations of free electrons and free holes, respectively. (a) Refractive index; (b) absorption coefficient
    Fig. 1. Refractive index and absorption coefficient of single crystal silicon at 1.3 μm wavelength band dependent on concentrations of free electrons and free holes, respectively. (a) Refractive index; (b) absorption coefficient
    Schematics of four operation modes of silicon electro-optical modulators. (a) Carrier injection; (b) carrier depletion; (c) carrier accumulation; (d) DC Kerr effect
    Fig. 2. Schematics of four operation modes of silicon electro-optical modulators. (a) Carrier injection; (b) carrier depletion; (c) carrier accumulation; (d) DC Kerr effect
    Operation principle of MZI modulator. (a) Relationship curve between output intensity of MZI modulator and phase difference, as well as influence of working point to modulation efficiency; (b) transmission spectra of silicon waveguide MZI with initial arm length differences of 0 μm, 100 μm, and 200 μm (from top to bottom); (c) schematics of optical and electrical signals in modulators with different (upper) and same (lower) propagation speeds, respectively
    Fig. 3. Operation principle of MZI modulator. (a) Relationship curve between output intensity of MZI modulator and phase difference, as well as influence of working point to modulation efficiency; (b) transmission spectra of silicon waveguide MZI with initial arm length differences of 0 μm, 100 μm, and 200 μm (from top to bottom); (c) schematics of optical and electrical signals in modulators with different (upper) and same (lower) propagation speeds, respectively
    Operation principle of a ring resonator modulator. (a) Transmission spectra of a silicon ring resonator at difference refractive index change; (b) relationship between photon lifetime and Q factor of a ring resonator
    Fig. 4. Operation principle of a ring resonator modulator. (a) Transmission spectra of a silicon ring resonator at difference refractive index change; (b) relationship between photon lifetime and Q factor of a ring resonator
    High speed electro-optical modulator. (a) Silicon MOS microring modulator and the corresponding eye diagrams at 100 Gbit/s (reprinted with permission from Ref.[39], Springer Nature); (b) EO response of the measurement link of the silicon MOS microring modulator (reprinted with permission from Ref.[39], Springer Nature); (c) slow-light silicon modulator; (d) EO response of the slow-light silicon modulator (upper) and the corresponding eye diagram at 112 Gbit/s (lower) (Figures (c) and (d) are reprinted with permission from Ref.[40] under CC-BY-NC)
    Fig. 5. High speed electro-optical modulator. (a) Silicon MOS microring modulator and the corresponding eye diagrams at 100 Gbit/s (reprinted with permission from Ref.[39], Springer Nature); (b) EO response of the measurement link of the silicon MOS microring modulator (reprinted with permission from Ref.[39], Springer Nature); (c) slow-light silicon modulator; (d) EO response of the slow-light silicon modulator (upper) and the corresponding eye diagram at 112 Gbit/s (lower) (Figures (c) and (d) are reprinted with permission from Ref.[40] under CC-BY-NC)
    Integrated CMOS–silicon photonics transmitter with 112 Gbaud/s rate. (a) Conceptual diagram of synergistical design with modulator, inductive network, near-end termination impedance, and far-end termination impedance as a whole; (b) driver-modulator integrated transmitter with 2.47 mm phase shifter; (c) EO response of integrated transmitter (reprinted with permission from Ref.[41] under CC BY 4.0)
    Fig. 6. Integrated CMOS–silicon photonics transmitter with 112 Gbaud/s rate. (a) Conceptual diagram of synergistical design with modulator, inductive network, near-end termination impedance, and far-end termination impedance as a whole; (b) driver-modulator integrated transmitter with 2.47 mm phase shifter; (c) EO response of integrated transmitter (reprinted with permission from Ref.[41] under CC BY 4.0)
    Monolithic integrated optoelectronic chips. (a) structural schematic[43]; (b) eye diagrams of the 4 transmitter channels in the optical transceiver chip at 64 Gbit/s[43]; (c) schematic of 3-section microring modulator with wavelength locking and tracing circuit[44] (reprinted with permission from Ref.[43-44], ©2024, Optica Publishing Group)
    Fig. 7. Monolithic integrated optoelectronic chips. (a) structural schematic[43]; (b) eye diagrams of the 4 transmitter channels in the optical transceiver chip at 64 Gbit/s[43]; (c) schematic of 3-section microring modulator with wavelength locking and tracing circuit[44] (reprinted with permission from Ref.[43-44], ©2024, Optica Publishing Group)
    High-linearity silicon electro-optical modulators. (a) Schematic of microring-assisted MZI modulator and optic-electric interfacing (reprinted with permission from Ref.[47], © 2024, IEEE); (b) schematic of slow-light phase shifter based on grating waveguide (upper) and the corresponding mode distribution (lower) (reprinted with permission from Ref.[48], © 2022, Optica Publishing Group); (c) scheme of ultra-high linearity MZI modulation with dual driving; (d) SFDR obtained with the dual driving scheme (Figures (c) and (d) are reprinted with permission from Ref.[49], © 2023, Optica Publishing Group)
    Fig. 8. High-linearity silicon electro-optical modulators. (a) Schematic of microring-assisted MZI modulator and optic-electric interfacing (reprinted with permission from Ref.[47], © 2024, IEEE); (b) schematic of slow-light phase shifter based on grating waveguide (upper) and the corresponding mode distribution (lower) (reprinted with permission from Ref.[48], © 2022, Optica Publishing Group); (c) scheme of ultra-high linearity MZI modulation with dual driving; (d) SFDR obtained with the dual driving scheme (Figures (c) and (d) are reprinted with permission from Ref.[49], © 2023, Optica Publishing Group)
    Ultra high extinction ratio electro-optical modulator. (a) Schematic of mode-multiplexing microring modulator; (b) microring transmission spectra at different bias voltages; (c) eye diagrams at 40 Gbit/s PAM4 (upper), 50 Gbit/s PAM4 (middle) and 30 Gbit/s PAM8 (lower) of the microring modulator (Figures (a)-(c) are reprinted with permission from Ref.[55], © 2022, Optica Publishing Group); (d) schematic of coupled-microring modulator; (e) extinction ratios of the modulator at different wavelengths and corresponding filter passbands; (f) measured frequency and location of a vibration signal using a distributed optical fiber sensing system with the coupled microring modulator (Figures (d)-(f) are reprinted with permission from Ref.[13] under CC BY 4.0 license)
    Fig. 9. Ultra high extinction ratio electro-optical modulator. (a) Schematic of mode-multiplexing microring modulator; (b) microring transmission spectra at different bias voltages; (c) eye diagrams at 40 Gbit/s PAM4 (upper), 50 Gbit/s PAM4 (middle) and 30 Gbit/s PAM8 (lower) of the microring modulator (Figures (a)-(c) are reprinted with permission from Ref.[55], © 2022, Optica Publishing Group); (d) schematic of coupled-microring modulator; (e) extinction ratios of the modulator at different wavelengths and corresponding filter passbands; (f) measured frequency and location of a vibration signal using a distributed optical fiber sensing system with the coupled microring modulator (Figures (d)-(f) are reprinted with permission from Ref.[13] under CC BY 4.0 license)
    Device typeBandwidth /GHzData rate /(Gbit/s)Energy consumption or driving amplitudeNoteRef.
    MOS ring>501001.6 VppCo-modulation of neff and α39
    Slow light1101125 Vppng=6.140
    Driver flip-chip bonded MZI43

    112 (OOK)

    224 (PAM4)

    0.7 pJ/bit @112 Gbit/s

    0.855 pJ/bit @224 Gbit/s

    EO co-design41
    Monolithic2561.6 pJ/bit4 ring modulators43
    Monolithic

    16

    22

    0.2 pJ @ 16 Gbit/s

    0.43 pJ @ 22 Gbit/s

    Auto wavelength tracking of a ring44
    Table 1. Typical research progress of silicon electro-optical modulators for high-speed optical interconnect
    Device typeBandwidth /GHzData rate /(Gbit/s)SFDRNoteRef.
    Ring-assisted MZI2.5113 dB·Hz2/3 @ 1.1 GHzAuto linearization47
    Slow light MZI30112 (PAM4)115 dB·Hz2/3 @ 1 GHzDC Kerr, ng=1048
    Single MZI123.4 dB·Hz6/7 @ 1 GHzDual drive49
    Dual parallel MZI

    123 dB·Hz6/7 @ 1 GHz

    120 dB·Hz6/7 @ 10 GHz

    22 dB carrier-to-distortion improvement50
    Table 2. Typical research progress of silicon electro-optical modulators with high linearity
    Device typeBandwidth/GHzData rate /(Gbit/s)Extinction ratio /dBNoteRef.
    Ring>5

    50 (PAM4)

    30 (PAM8)

    55 (static)PN junction, mode division multiplexing55
    Coupled ring0.7268 (dynamic)PIN junction, high-order optical filter13
    Cascaded MZI1066 (static)PN junction56
    Table 3. Typical research progress of silicon electro-optical modulators with ultra-high extinction ratio
    Bigeng Chen, Ke Li, Yiru Zhao, Shaoliang Yu. Research Progress on Silicon Electro-Optical Modulator (Invited)[J]. Laser & Optoelectronics Progress, 2024, 61(19): 1913009
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