Researching | Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

Journals >Journal of Semiconductors >Volume 42 >Issue 1 >Page 014103 > Article

Journal of Semiconductors
Vol. 42, Issue 1, 014103 (2021)

Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

Ye Tao^1、3, Xuhong Li¹, Zhongqiang Wang¹, Gang Li², Haiyang Xu¹, Xiaoning Zhao¹, Ya Lin¹, and Yichun Liu¹

Author Affiliations

¹Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, Changchun 130024, China

²Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China

³School of Science, Changchun University of Science and Technology, Changchun 130022, China

show less

DOI: 10.1088/1674-4926/42/1/014103 Cite this Article

Ye Tao, Xuhong Li, Zhongqiang Wang, Gang Li, Haiyang Xu, Xiaoning Zhao, Ya Lin, Yichun Liu. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices[J]. Journal of Semiconductors, 2021, 42(1): 014103 Copy Citation Text

show less

References

[1] et alCompact modeling of complementary switching in oxide-based ReRAM devices. IEEE Trans Electron Devices, 66, 1268(2019).

[2] Nanoionics-based resistive switching memories. Nat Mater, 6, 833(2007).

[3] et alProgrammable polymer thin film and non-volatile memory device. Nat Mater, 3, 918(2004).

[4] et alFerroelastic switching for nanoscale non-volatile magnetoelectric devices. Nat Mater, 9, 309(2010).

[5] Phase-change materials for non-volatile photonic applications. Nat Photonics, 11, 465(2017).

[6] et alUniform multilevel switching of graphene oxide-based RRAM achieved by embedding with gold nanoparticles for image pattern recognition. Appl Phys Lett, 116, 163503(2020).

[7] et alMoisture-powered memristor with interfacial oxygen migration for power-free reading of multiple memory states. Nano Energy, 71, 104628(2020).

[8] et alPhotoassisted electroforming method for reliable low-power organic-inorganic perovskite memristors. Adv Funct Mater, 30, 1910151(2020).

[9] et alToward a generalized Bienenstock-Cooper-Munro rule for spatiotemporal learning via triplet-STDP in memristive devices. Nat Commun, 11, 1(2020).

[10] et alMemristors with organic-inorganic halide perovskites. InfoMat, 1, 183(2019).

[11] et alSynaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO memristor. Adv Funct Mater, 22, 2759(2012).

[12] et alImproved resistive switching reliability by using dual-layer nanoporous carbon structure. Appl Phys Lett, 111, 183504(2017).

[13] et alLong-term and transient time variation of cosmic ray fluxes detected in Argentina by CARPET cosmic ray detector. J Atmos Sol-Terr Phy, 73, 1410(2011).

[14] et alUnexpectedly large charge radii of neutron-rich calcium isotopes. Nat Phys, 12, 594(2016).

[15] et alA study of gamma-ray exposure of Cu-SiO₂ programmable metallization cells. IEEE Trans Nucl Sci, 62, 2404(2015).

[16] et alTotal ionizing dose tolerance of Ag-Ge₄₀S₆₀ based programmable metallization cells. IEEE Trans Nucl Sci, 61, 1726(2014).

[17] et alEffects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures. IEEE Trans Nucl Sci, 59, 3093(2012).

[18] et alIonizing radiation effects on nonvolatile memory properties of programmable metallization cells. IEEE Trans Nucl Sci, 61, 2985(2014).

[19] et alTotal ionizing dose (TID) effects on TaO_x-based resistance change memory. IEEE Trans Electron Devices, 58, 2800(2011).

[20]

[21] et alFlexible sensors based on radiation-induced diffusion of Ag in chalcogenide glass. IEEE Trans Nucl Sci, 61, 3432(2014).

[22] et alImproved uniformity and endurance through suppression of filament overgrowth in electrochemical metallization memory with AgInSbTe buffer layer. IEEE J Electron Devices, 6, 714(2018).

[23] Electron self-trapping in Ge₂Se₃ and its role in Ag and Sn incorporation. Mater Res Soc Symp Proc, 1431(2012).

[24] et alAn effective gamma white spots removal method for CCD-based neutron images denoising. Fusion Eng Des, 150, 11375(2020).

[25] et alImproved switching reliability achieved in HfO_x based RRAM with mountain-like surface-graphited carbon layer. Appl Surf Sci, 440, 107(2018).

[26] Nano-graphite clusters regulation for reliability improvement of amorphous carbon-based resistive random access memory. Phys Status Solidi A, 216, 1900278(2019).

[27] et alPerformance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters. Nanoscale, 5, 4490(2013).

[28] et alTemperature dependence of thermal properties of Ag₈In₁₄Sb₅₅Te₂₃ phase-change memory materials. Appl Phys A, 94, 627(2009).

[29] Resistive switching memories based on metal oxides: mechanisms, reliability and scaling. Semicond Sci Tech, 31, 063002(2016).

[30] et alBiodegradable natural pectin-based flexible multilevel resistive switching memory for transient electronics. Small, 15, 1803970(2019).

[31] et alImprovement of resistive switching memory achieved by using arc-shaped bottom electrode. Appl Phys Express, 8, 014101(2014).

[32] et alTotal ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO_x/Pt RRAM device. Nanoscale Res Lett, 9, 452(2014).

[33] et alHighly stable radiation-hardened resistive-switching memory. IEEE Electron Device Lett, 31, 1470(2010).

[34] et alThree-dimensional observation of the conductive filament in nanoscaled resistive memory devices. Nano Lett, 14, 2401(2014).

Figures&Tables (7)

References (34)

Copy Citation Text

Ye Tao, Xuhong Li, Zhongqiang Wang, Gang Li, Haiyang Xu, Xiaoning Zhao, Ya Lin, Yichun Liu. Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices[J]. Journal of Semiconductors, 2021, 42(1): 014103

Download Citation

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address