• Journal of Semiconductors
  • Vol. 41, Issue 3, 032305 (2020)
Desheng Zeng1、2, Li Zhong1, Suping Liu1, and Xiaoyu Ma1、2
Author Affiliations
  • 1National Engineering Center for Optoelectronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.1088/1674-4926/41/3/032305 Cite this Article
    Desheng Zeng, Li Zhong, Suping Liu, Xiaoyu Ma. Analysis of the time domain characteristics of tapered semiconductor lasers[J]. Journal of Semiconductors, 2020, 41(3): 032305 Copy Citation Text show less
    Schematic top view of the laser.
    Fig. 1. Schematic top view of the laser.
    (Color online) The top panel shows the change of total charge carriers and the bottom panel shows the change of total photons with the change of time with a 50 μm front grating.
    Fig. 2. (Color online) The top panel shows the change of total charge carriers and the bottom panel shows the change of total photons with the change of time with a 50 μm front grating.
    (Color online) The frequency of output light with a 50 μm front grating.
    Fig. 3. (Color online) The frequency of output light with a 50 μm front grating.
    (Color online) The frequency of output light when front grating is 75 μm.
    Fig. 4. (Color online) The frequency of output light when front grating is 75 μm.
    (Color online) The top panel shows the transient frequency of output light during 0–5 ns and the bottom panel shows the stable state frequency of output light with a 100 μm front grating.
    Fig. 5. (Color online) The top panel shows the transient frequency of output light during 0–5 ns and the bottom panel shows the stable state frequency of output light with a 100 μm front grating.
    (Color online) The top panel shows the change of total charge carriers and the bottom panel shows the total photons with a 100 μm front grating.
    Fig. 6. (Color online) The top panel shows the change of total charge carriers and the bottom panel shows the total photons with a 100 μm front grating.
    (Color online) The top panel shows the change of output power with the change of time during all simulation time and the bottom panel shows the output power in stable state with a 100 μm front grating.
    Fig. 7. (Color online) The top panel shows the change of output power with the change of time during all simulation time and the bottom panel shows the output power in stable state with a 100 μm front grating.
    (Color online) The stable state frequency of output light with a 200 μm front grating.
    Fig. 8. (Color online) The stable state frequency of output light with a 200 μm front grating.
    (Color online) The top panel shows the change of output power with the change of time during all simulation time and the bottom panel shows the output power in stable state with a 200 μm front grating.
    Fig. 9. (Color online) The top panel shows the change of output power with the change of time during all simulation time and the bottom panel shows the output power in stable state with a 200 μm front grating.
    ParameterTypical value
    Back grating length (L1) 100 μm
    MO area length (L2) 600 μm
    Front grating length (L3) 50, 75, 100, 200 μm
    PA area length (L4) 1200 μm
    MO area width4 μm
    Front cavity width134 μm
    Current injection efficiency (ƞi) 0.95
    Spontaneous emission factor (nsp)2.6
    Differential gain coefficient (A) 1.0 × 10 –11 cm
    Transparency carrier density (N0) 1.0 × 1012 cm–2
    Total recombination time (τe) 1.3 × 10–9 s
    Grating cross coupling coefficient (ĸ) 30 cm–1
    Grating radiation loss (ε) 10 cm–1
    Approximately emission wavelength (λ) 980 nm
    Front cavity facet power reflective (Rf) 0.002
    Back cavity facet power reflective (Rb) 0.3
    Group refractive index (ng) 4.6
    MO area injection current (IMO) 120 mA
    PA area injection current (IPA) 3.0 A
    Table 1. Parameters of simulation.
    Desheng Zeng, Li Zhong, Suping Liu, Xiaoyu Ma. Analysis of the time domain characteristics of tapered semiconductor lasers[J]. Journal of Semiconductors, 2020, 41(3): 032305
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