In recent year, mid-wave infrared detection technology has rapid development, and plays an important role in variable applications. Among different kinds of mid-infrared detectors, Ga-free InAs/InAsSb type II superlattice (T2 SL) detectors have the potential to achieve higher minority carrier lifetime and higher performance due to the removal of Ga-related defects. The application of photonic crystals is another way to improve the performance of detectors by optical control, such as the improvement of responsibility and the decrease of the dark current. With higher responsibility and lower dark current, the detector can have higher operating temperature, which results in low Size, Weight and Power (SWaP). At the same time, the photonic crystals can also realize the optimization of optical performance such as broadband spectrum responsibility without changing the material structure. The material growth and device design of InAs/InAsSb T2 SL detectors and photonic crystal structure detectors were reviewed and discussed in this paper. Two methods to improve the performance and the progress of mid-wave infrared detectors were introduced in detail.