[1] YIN X, ZHU Z, LIU Y, et al. Ultra-compact TSV-based L-C low-pass filter with stopband up to 40 GHz for microwave application [J]. IEEE Trans Microwave Theo Tech, 2019, 67(2): 738-745.
[4] LIU X X, ZHU Z M, YANG Y T, et al. Electrical modeling and analysis of differential dielectric-cavity through-silicon via array [J]. IEEE Microwave Wirel Compon Lett, 2017, 27(7): 618-620.
[6] WANG F J, ZHU Z M, YANG Y T, et al. An effective approach of reducing the keep-out-zone (KOZ) induced by coaxial through-silicon-via (TSV) [J]. IEEE Trans Elec Dev, 2014, 61(8): 2928-2934.
[7] ZHUO C, CHEN B X. System-level design consideration and optimization of through-silicon-via inductor [J]. Integration, 2019, 65: 362-369.
[8] RYU S K, LU K, JIANG T F, et al. Effect of thermal stresses on carrier mobility and keep-out zone around through-silicon vias for 3-D integration [J]. IEEE Trans Dev Mater Reliab, 2012, 12(2): 255-262.
[9] CHE F X, PUTRA W N, HERYANTO A, et al. Numerical and experimental study on Cu protrusion of Cu-filled through-silicon vias (TSV) [C] // IEEE Int 3D Syst Integr Conf. Osaka, Japan. 2012: 1-6.
[10] SUN Y, THOMPSON S, NISHIDA T. Strain effect in semiconductors: theory and device applications [M]. New York: Springer-Verlag, 2010.