• Microelectronics
  • Vol. 52, Issue 1, 115 (2022)
YIN Xiangkun1, LIU Jingting2, and WANG Fengjuan2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210223 Cite this Article
    YIN Xiangkun, LIU Jingting, WANG Fengjuan. COMSOL-Based Multi-Physical Field Coupling Characteristics for TSV Inductors[J]. Microelectronics, 2022, 52(1): 115 Copy Citation Text show less
    References

    [1] YIN X, ZHU Z, LIU Y, et al. Ultra-compact TSV-based L-C low-pass filter with stopband up to 40 GHz for microwave application [J]. IEEE Trans Microwave Theo Tech, 2019, 67(2): 738-745.

    [4] LIU X X, ZHU Z M, YANG Y T, et al. Electrical modeling and analysis of differential dielectric-cavity through-silicon via array [J]. IEEE Microwave Wirel Compon Lett, 2017, 27(7): 618-620.

    [6] WANG F J, ZHU Z M, YANG Y T, et al. An effective approach of reducing the keep-out-zone (KOZ) induced by coaxial through-silicon-via (TSV) [J]. IEEE Trans Elec Dev, 2014, 61(8): 2928-2934.

    [7] ZHUO C, CHEN B X. System-level design consideration and optimization of through-silicon-via inductor [J]. Integration, 2019, 65: 362-369.

    [8] RYU S K, LU K, JIANG T F, et al. Effect of thermal stresses on carrier mobility and keep-out zone around through-silicon vias for 3-D integration [J]. IEEE Trans Dev Mater Reliab, 2012, 12(2): 255-262.

    [9] CHE F X, PUTRA W N, HERYANTO A, et al. Numerical and experimental study on Cu protrusion of Cu-filled through-silicon vias (TSV) [C] // IEEE Int 3D Syst Integr Conf. Osaka, Japan. 2012: 1-6.

    [10] SUN Y, THOMPSON S, NISHIDA T. Strain effect in semiconductors: theory and device applications [M]. New York: Springer-Verlag, 2010.

    YIN Xiangkun, LIU Jingting, WANG Fengjuan. COMSOL-Based Multi-Physical Field Coupling Characteristics for TSV Inductors[J]. Microelectronics, 2022, 52(1): 115
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